⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6755026 | 0.98 | — | — | |
| SCHEMBL5394970 | 0.83 | — | — | |
| SCHEMBL6100775 | 0.83 | — | — | |
| SCHEMBL18940871 | 0.83 | NPSR1 (0.30) | — | |
| SCHEMBL13554320 | 0.83 | ALOX15 (0.32) | — | |
| SCHEMBL47303 | 0.81 | ALDH1A1 (0.37) | — | |
| SCHEMBL23986587 | 0.81 | — | — | |
| SCHEMBL13554363 | 0.81 | NPSR1 (0.33) | — | |
| SCHEMBL1402156 | 0.81 | CYP2C19 (0.31) | — | |
| SCHEMBL1402155 | 0.81 | KDM4E (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 77 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12032290-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-12032290-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-20210318616-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2021-10-14 | — | — | US | disclosed |
| US-9910358-B2 | Patterning process and chemically amplified negative resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-06 | — | — | US | disclosed |
| US-9910358-B2 | Patterning process and chemically amplified negative resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-06 | — | — | US | disclosed |
| US-9709890-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-18 | — | — | US | disclosed |
| US-9709890-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-18 | — | — | US | disclosed |
| US-9551932-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9551932-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-24 | — | — | US | disclosed |
| US-20160109803-A1 | PATTERNING PROCESS AND CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-04-21 | — | — | US | disclosed |
| US-20130052587-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-28 | — | — | US | disclosed |
| US-20130052587-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-28 | — | — | US | disclosed |
| US-20130017492-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20130017492-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20120082939-A1 | ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE RESIN COMPOSITION, AND ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-04-05 | — | — | US | disclosed |
| US-20120082939-A1 | ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE RESIN COMPOSITION, AND ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-04-05 | — | — | US | disclosed |
| US-7041846-B2 | useful as monomers for polymerization to form base resins for use in micropatterning resist compositions; improved transparency, especially at the exposure wavelength of an excimer laser, and improved dry etching resistance | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-05-09 | — | — | US | disclosed |
| US-20040176630-A1 | Alicyclic methacrylate having oxygen substituent group on alpha-methyl | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-09-09 | — | — | US | disclosed |
| US-20040019152-A1 | Alcoholic hydroxyl group-, aromatic ring- and protolytically leaving group-containing copolymer | NIPPON SHOKUBAI CO., LTD. | 2004-01-29 | — | — | US | disclosed |
| EP-1357428-A1 | Alcoholic hydroxyl group-, aromatic ring- and protolytically leaving group-containing copolymer | Nippon Shokubai Co., Ltd. (JP) | 2003-10-29 | — | — | EP | disclosed |