SCHEMBL47303

SCHEMBL47303

C=C(C)C(=O)OC1(CC)CCCC1

nearest known ligand 0.37

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.37
THRB P10828 1/20 0.36
TSHR P16473 3/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL133202 0.98 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL47306 0.98 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL4544299 0.98 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL686077 0.98 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL4544316 0.98 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL28137753 0.98 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL27927215 0.96 ALDH1A1 (0.37) ALDH1A1THRBTSHR
SCHEMBL673334 0.92 ALDH1A1 (0.39) ALDH1A1THRBTSHR
Acrylic Acid SCHEMBL31420446 0.90 LMNA (0.31) ALDH1A1THRBTSHR
SCHEMBL21332849 0.86 ALDH1A1 (0.38) ALDH1A1THRBTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 2496 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119798524-A Resin for immersion type ArF photoresist, preparation method and immersion type ArF photoresist 宁波南大光电材料有限公司 2025-04-11 CN claimed
CN-119798525-A Resin for immersion photoresist, preparation method and immersion photoresist 宁波南大光电材料有限公司 2025-04-11 CN claimed
CN-119613607-A Preparation method of 193nm photoresist resin 江苏集萃光敏电子材料研究所有限公司 2025-03-14 CN claimed
CN-115542665-B Positive chemical amplification type photoresist and application method thereof 徐州博康信息化学品有限公司 2025-03-07 CN claimed
CN-119285842-A Fluorine-containing polymer, preparation method thereof and ArF immersed photoresist prepared from fluorine-containing polymer 瑞红(苏州)电子化学品股份有限公司 2025-01-10 CN claimed
CN-119148465-A Photosensitive resin composition, photosensitive dry film and application thereof 杭州福斯特电子材料有限公司 2024-12-17 CN claimed
CN-118853024-A High-nickel ternary positive electrode binder and preparation method and application thereof 深圳大学 2024-10-29 CN claimed
CN-118625599-A Photosensitive resin composition, photosensitive dry film and preparation method thereof 杭州福斯特电子材料有限公司 2024-09-10 CN claimed
CN-118108890-B G-line and h-line light absorption resin and preparation method thereof 广东粤港澳大湾区黄埔材料研究院 2024-07-02 CN claimed
CN-118108890-A G-line and h-line light absorption resin and preparation method thereof 广东粤港澳大湾区黄埔材料研究院 2024-05-31 CN claimed
CN-104672410-B Self-assembled structures, methods of making the same, and articles comprising the same 得克萨斯A&M大学系统 2017-08-08 CN claimed
US-9405189-B2 Self-assembled structures, method of manufacture thereof and articles comprising the same ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-08-02 US claimed
CN-104672410-A Self-assembled structures, methods of making the same, and articles comprising the same ROHM & HAAS ELECT MAT 2015-06-03 CN claimed
CN-104678699-A Self-assembled structures, methods of making the same, and articles comprising the same ROHM & HAAS ELECT MAT 2015-06-03 CN claimed
US-20150072291-A1 SELF-ASSEMBLED STRUCTURES, METHOD OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-03-12 US claimed
US-20150072292-A1 SELF-ASSEMBLED STRUCTURES, METHOD OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME THE TEXAS A&M UNIVERSITY SYSTEM 2015-03-12 US claimed
WO-2013190406-A1 ORGANIC SOLVENT DEVELOPABLE PHOTORESIST COMPOSITION INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-12-27 WO claimed
US-20130344441-A1 ORGANIC SOLVENT DEVELOPABLE PHOTORESIST COMPOSITION INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-12-26 US claimed
CN-101256355-B Composition for immersion lithography and immersion lithography method ROHM & HAAS ELECT MAT 2013-03-27 CN claimed
US-20120115085-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2012-05-10 US claimed