⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15515137 | 0.87 | — | — | |
| SCHEMBL17599791 | 0.87 | — | — | |
| SCHEMBL7104338 | 0.87 | — | — | |
| SCHEMBL33275 | 0.82 | — | — | |
| SCHEMBL5041251 | 0.82 | — | — | |
| SCHEMBL7903268 | 0.82 | — | — | |
| SCHEMBL8201124 | 0.82 | — | — | |
| SCHEMBL2180089 | 0.82 | — | — | |
| SCHEMBL16594173 | 0.82 | — | — | |
| SCHEMBL16303 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 863 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240021727-A1 | Gate Structure and Method with Enhanced Gate Contact and Threshold Voltage | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-01-18 | — | — | US | claimed |
| US-20230377879-A1 | BARRIER LAYER FOR PREVENTING ALUMINUM DIFFUSION | APPLIED MATERIALS, INC. (US) | 2023-11-23 | — | — | US | claimed |
| WO-2023225138-A1 | BARRIER LAYER FOR PREVENTING ALUMINUM DIFFUSION | APPLIED MATERIALS, INC. (US) | 2023-11-23 | — | — | WO | claimed |
| US-11818967-B2 | Sidewall protection for PCRAM device | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-14 | — | — | US | claimed |
| US-11804547-B2 | Gate structure and method with enhanced gate contact and threshold voltage | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-10-31 | — | — | US | claimed |
| US-20230253466-A1 | P-TYPE DIPOLE FOR P-FET | APPLIED MATERIALS, INC. (US) | 2023-08-10 | — | — | US | claimed |
| US-RE49538-E1 | Semiconductor device and method of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-05-30 | — | — | US | claimed |
| US-11658218-B2 | P-type dipole for p-FET | APPLIED MATERIALS, INC. (US) | 2023-05-23 | — | — | US | claimed |
| US-20230122103-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-04-20 | — | — | US | claimed |
| US-20220336672-A1 | SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO LTD (KR) | 2022-10-20 | — | — | US | claimed |
| US-20080087936-A1 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE TO REALIZE MULTI-BIT CELL AND METHOD FOR MANUFACTURING THE SAME | DONGBU HITEK CO., LTD. (KR) | 2008-04-17 | — | — | US | claimed |
| CN-101162708-A | Nonvolatile semiconductor memory device to realize multi-bit cell and method for manufacturing the same | DONGBU ELECTRONICS CO LTD (KR) | 2008-04-16 | — | — | CN | claimed |
| US-20060261398-A1 | Nonvolatile memory device | SAMSUNG ELECTRONICS CO., LTD. | 2006-11-23 | — | — | US | claimed |
| US-7018915-B2 | Group III nitride compound semiconductor device and method for forming an electrode | TOYODA GOSEI CO., LTD. (JP) | 2006-03-28 | — | — | US | claimed |
| US-6960305-B2 | Methods for forming and releasing microelectromechanical structures | REFLECTIVITY, INC (US) | 2005-11-01 | — | — | US | claimed |
| US-20040222499-A1 | Group lll nitride compound semiconductor device and method for forming an electrode | TOYODA GOSEI CO., LTD. (JP) | 2004-11-11 | — | — | US | claimed |
| US-6806571-B2 | III nitride compound semiconductor element an electrode forming method | TOYODA GOSEI CO., LTD. (JP) | 2004-10-19 | — | — | US | claimed |
| US-20040035821-A1 | Methods for forming and releasing microelectromechanical structures | REFLECTIVITY, INC. | 2004-02-26 | — | — | US | claimed |
| US-20030155575-A1 | III nitride compound semiconductor element an electrode forming method | SHIBATA NAOKI (JP) | 2003-08-21 | — | — | US | claimed |
| US-6362526-B1 | Alloy barrier layers for semiconductors | ADVANCED MICRO DEVICES, INC. | 2002-03-26 | — | — | US | claimed |