SCHEMBL6138511

SCHEMBL6138511

CCCC(=O)CC(=O)OOC(C)(C)C.CCCC(=O)CC(=O)[O-].CCCC(=O)CC(=O)[O-].[Zr+2]

nearest known ligand 0.36

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
FFAR3 O14843 2/20 0.36
HDAC3 O15379 2/20 0.36
HDAC1 Q13547 2/20 0.36
HDAC2 Q92769 2/20 0.36
HDAC8 Q9BY41 2/20 0.36
ALDH1A1 P00352 1/20 0.31
CES2 O00748 1/20 0.30
CES1 P23141 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4139438 0.97 FFAR3 (0.36) FFAR3HDAC3HDAC1HDAC2HDAC8
SCHEMBL6138575 0.88 ALDH1A1 (0.37) FFAR3HDAC3HDAC1HDAC2HDAC8
SCHEMBL4130407 0.88 ALDH1A1 (0.37) FFAR3HDAC3HDAC1HDAC2HDAC8
SCHEMBL1362531 0.79 HDAC3 (0.44) FFAR3HDAC3HDAC1HDAC2HDAC8
SCHEMBL5973893 0.79 FFAR3 (0.38) FFAR3HDAC3HDAC1HDAC2HDAC8
SCHEMBL3342167 0.78 HDAC3 (0.57) FFAR3HDAC3HDAC1HDAC2HDAC8
SCHEMBL4145592 0.78 FFAR3 (0.40) FFAR3HDAC3HDAC1HDAC2HDAC8
SCHEMBL30238343 0.78 HDAC3 (0.43) FFAR3HDAC3HDAC1HDAC2HDAC8
SCHEMBL30238023 0.78 HDAC3 (0.43) FFAR3HDAC3HDAC1HDAC2HDAC8
SCHEMBL4145593 0.77 FFAR3 (0.39) FFAR3HDAC3HDAC1HDAC2HDAC8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024116915-A1 ADHESIVE SHEET HAVING RELEASE SHEET 日東電工株式会社 2024-06-06 WO disclosed
WO-2024063044-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2024-03-28 WO disclosed
WO-2024019064-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID 日産化学株式会社 2024-01-25 WO disclosed
WO-2024009993-A1 METHOD OF MANUFACTURING LAMINATE AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT 日産化学株式会社 2024-01-11 WO disclosed
WO-2023157943-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING UNSATURATED BOND AND CYCLIC STRUCTURE 日産化学株式会社 2023-08-24 WO disclosed
WO-2023136250-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2023-07-20 WO disclosed
WO-2023112573-A1 METHOD FOR PRODUCING CURED PRODUCT, METHOD FOR PRODUCING LAMINATE , METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND TREATMENT LIQUID 富士フイルム株式会社 2023-06-22 WO disclosed
WO-2023074777-A1 ADDITIVE-CONTAINING COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2023-05-04 WO disclosed
WO-2022255210-A1 ADHESIVE AGENT COMPOSITION, ADHESIVE AGENT, AND SURFACE PROTECTION FILM 日東電工株式会社 2022-12-08 WO disclosed
WO-2020138189-A1 FILM FORMING COMPOSITION 日産化学株式会社 2020-07-02 WO disclosed
EP-1117102-B1 Method of manufacturing material for forming insulating film JSR CORP (JP) 2005-08-10 EP disclosed
US-6642352-B2 Providing a silicon inorganic polymer compound or polyarylenes or polyphenylene ether organic polymer compound, treating the polymeric compound with a zeta-potential producing filter material, and producing curable polymer compound JSR CORPORATION (JP) 2003-11-04 US disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1117102-A2 Method of manufacturing material for forming insulating film JSR Corporation (JP) 2001-07-18 EP disclosed