Predicted protein targets (top 14)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.37 |
| ▸ | TSHR | P16473 | 2/20 | 0.32 |
| ▸ | KDM4C | Q9H3R0 | 1/20 | 0.32 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.32 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.32 |
| ▸ | HDAC3 | O15379 | 2/20 | 0.31 |
| ▸ | HDAC1 | Q13547 | 2/20 | 0.31 |
| ▸ | HDAC2 | Q92769 | 2/20 | 0.31 |
| ▸ | HDAC8 | Q9BY41 | 2/20 | 0.31 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.31 |
| ▸ | CES2 | O00748 | 1/20 | 0.31 |
| ▸ | CES1 | P23141 | 1/20 | 0.31 |
| ▸ | CTSD | P07339 | 1/20 | 0.30 |
| ▸ | FFAR3 | O14843 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4130407 | 0.96 | ALDH1A1 (0.37) | ALDH1A1TSHRKDM4CHSD17B10TDP1 | |
| SCHEMBL6138511 | 0.88 | FFAR3 (0.36) | ALDH1A1HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL4139438 | 0.88 | FFAR3 (0.36) | ALDH1A1HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL515690 | 0.81 | ALDH1A1 (0.50) | ALDH1A1TSHRHSD17B10TDP1HDAC3 | |
| SCHEMBL6415291 | 0.78 | ALDH1A1 (0.41) | ALDH1A1TSHRHDAC3HDAC1HDAC2 | |
| SCHEMBL29904875 | 0.76 | ALDH1A1 (0.39) | ALDH1A1TSHRHDAC3HDAC1HDAC2 | |
| SCHEMBL31434548 | 0.76 | ALDH1A1 (0.39) | ALDH1A1TSHRHDAC3HDAC1HDAC2 | |
| Acetic Acid SCHEMBL28485319 | 0.76 | ALDH1A1 (0.44) | ALDH1A1TSHRHSD17B10TDP1HDAC3 | |
| SCHEMBL6138440 | 0.74 | ALDH1A1 (0.38) | ALDH1A1TSHRHDAC3HDAC1HDAC2 | |
| SCHEMBL31434757 | 0.74 | ALDH1A1 (0.38) | ALDH1A1TSHRHDAC3HDAC1HDAC2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-121586750-A | Composition for forming silicon-containing underlayer film for directional self-assembly | 日产化学株式会社 | 2026-02-27 | — | — | CN | disclosed |
| CN-113785243-B | Composition for resist pattern metallization process | 日产化学株式会社 | 2025-05-02 | — | — | CN | disclosed |
| CN-119768742-A | Composition for forming silicon-containing resist underlayer film | 日产化学株式会社 | 2025-04-04 | — | — | CN | disclosed |
| CN-119563142-A | Composition for forming silicon-containing resist underlayer film containing multifunctional sulfonic acid | 日产化学株式会社 | 2025-03-04 | — | — | CN | disclosed |
| CN-119487453-A | Method for manufacturing laminate and method for manufacturing semiconductor element | 日产化学株式会社 | 2025-02-18 | — | — | CN | disclosed |
| US-20240419073-A1 | ADDITIVE-CONTAINING SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2024-12-19 | — | — | US | disclosed |
| CN-115362216-B | Composition for forming film | 日产化学株式会社 | 2024-07-19 | — | — | CN | disclosed |
| CN-118159910-A | Additive-containing silicon-containing resist underlayer film forming composition | 日产化学株式会社 | 2024-06-07 | — | — | CN | disclosed |
| WO-2024063044-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2024-03-28 | — | — | WO | disclosed |
| WO-2024019064-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID | 日産化学株式会社 | 2024-01-25 | — | — | WO | disclosed |
| WO-2022230940-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2022-11-03 | — | — | WO | disclosed |
| WO-2022210954-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210262-A1 | LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210901-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210960-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ORGANIZATION | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210944-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| EP-1117102-B1 | Method of manufacturing material for forming insulating film | JSR CORP (JP) | 2005-08-10 | — | — | EP | disclosed |
| US-6642352-B2 | Providing a silicon inorganic polymer compound or polyarylenes or polyphenylene ether organic polymer compound, treating the polymeric compound with a zeta-potential producing filter material, and producing curable polymer compound | JSR CORPORATION (JP) | 2003-11-04 | — | — | US | disclosed |
| US-20010009936-A1 | Method of manufacturing material for forming insulating film | JSR CORPORATION (JP) | 2001-07-26 | — | — | US | disclosed |
| EP-1117102-A2 | Method of manufacturing material for forming insulating film | JSR Corporation (JP) | 2001-07-18 | — | — | EP | disclosed |