SCHEMBL6139860

SCHEMBL6139860

CCc1ccc(S(=O)(=O)OS(c2cccc(N(C)C)c2)(c2cccc(N(C)C)c2)c2cccc(N(C)C)c2)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 2/20 0.43
CA12 O43570 1/20 0.43
CA1 P00915 1/20 0.43
CA4 P22748 1/20 0.43
CA9 Q16790 1/20 0.43
ALDH1A1 P00352 2/20 0.40
KDM4E B2RXH2 2/20 0.40
MAPT P10636 2/20 0.40
F2 P00734 1/20 0.40
VDR P11473 1/20 0.40
GAA P10253 1/20 0.38
APP P05067 1/20 0.35
HTR6 P50406 1/20 0.35
ADAMTS4 O75173 1/20 0.35
HPGD P15428 1/20 0.34
POLB P06746 2/20 0.33
CNR2 P34972 1/20 0.33
CD4 P01730 1/20 0.33
HDAC1 Q13547 1/20 0.33
HDAC6 Q9UBN7 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140799 0.85 CA12 (0.46) CA2CA12CA1CA4CA9
SCHEMBL6140890 0.84 CA2 (0.43) CA2CA12CA1CA4CA9
SCHEMBL3182566 0.79 ALDH1A1 (0.51) CA2ALDH1A1KDM4EMAPTF2
SCHEMBL6140051 0.76 CA12 (0.41) CA2CA12CA1CA4CA9
SCHEMBL6140765 0.74 CNR2 (0.37) CA2CA12CA1CA4CA9
SCHEMBL6140133 0.74 CNR2 (0.37) CA2CA12CA1CA4CA9
SCHEMBL3195217 0.74 MAPT (0.50) CA2CA12CA9ALDH1A1KDM4E
SCHEMBL6140497 0.74 CNR2 (0.35) CA2CA12CA1CA4CA9
SCHEMBL6140966 0.74 CNR2 (0.35) CA2CA12CA1CA4CA9
SCHEMBL6140141 0.74 CA12 (0.38) CA2CA12CA1CA4CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed