SCHEMBL6140799

SCHEMBL6140799

Cc1ccc(S(=O)(=O)OS(c2cccc(N(C)C)c2)(c2cccc(N(C)C)c2)c2cccc(N(C)C)c2)cc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 2/20 0.46
CA9 Q16790 2/20 0.46
CA1 P00915 1/20 0.46
CA2 P00918 1/20 0.46
CA4 P22748 1/20 0.46
C5AR1 P21730 1/20 0.41
ALDH1A1 P00352 4/20 0.40
MAPT P10636 3/20 0.40
TDP1 Q9NUW8 2/20 0.40
LMNA P02545 1/20 0.40
MAPK1 P28482 1/20 0.40
GFER P55789 1/20 0.40
MCL1 Q07820 1/20 0.40
MCOLN3 Q8TDD5 1/20 0.39
NPY5R Q15761 1/20 0.39
CNR2 P34972 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
HTT P42858 2/20 0.38
L3MBTL1 Q9Y468 2/20 0.38
POLB P06746 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140862 0.88 CA12 (0.38) CA12CA9CA1CA2CA4
SCHEMBL6140141 0.88 CA12 (0.38) CA12CA9CA1CA2CA4
SCHEMBL6139860 0.85 CA2 (0.43) CA12CA9CA1CA2CA4
SCHEMBL6140065 0.83 ALDH1A1 (0.53) CA12CA9CA1CA2CA4
SCHEMBL6140497 0.82 CNR2 (0.35) CA12CA9CA1CA2CA4
SCHEMBL6140966 0.82 CNR2 (0.35) CA12CA9CA1CA2CA4
SCHEMBL6140236 0.80 PSEN1 (0.40) ALDH1A1MAPTTDP1LMNAHTT
SCHEMBL6140883 0.80 PSEN1 (0.40) ALDH1A1MAPTTDP1LMNAHTT
SCHEMBL6140051 0.79 CA12 (0.41) CA12CA9CA1CA2CA4
SCHEMBL3136672 0.79 HTT (0.44) CA12CA9CA1CA2C5AR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed