SCHEMBL6140170

SCHEMBL6140170

CN(C)c1ccc([S+](c2ccc(OCC(=O)OC(C)(C)C)cc2)c2ccc(OCC(=O)OC(C)(C)C)cc2)cc1.Cc1ccc(C)c(S(=O)(=O)[O-])c1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.40
NPC1 O15118 1/20 0.40
L3MBTL1 Q9Y468 1/20 0.40
MAPT P10636 4/20 0.40
HTT P42858 1/20 0.40
PSEN1 P49768 2/20 0.39
PSEN2 P49810 2/20 0.39
APH1B Q8WW43 2/20 0.39
NCSTN Q92542 2/20 0.39
APH1A Q96BI3 2/20 0.39
PSENEN Q9NZ42 2/20 0.39
GAA P10253 5/20 0.36
ALDH1A1 P00352 4/20 0.36
MEN1 O00255 1/20 0.36
KMT2A Q03164 1/20 0.36
PTPN1 P18031 1/20 0.36
LMNA P02545 2/20 0.35
TP53 P04637 1/20 0.35
HPGD P15428 1/20 0.35
NPSR1 Q6W5P4 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140151 0.89 MAPT (0.46) L3MBTL1MAPTHTTPSEN1PSEN2
SCHEMBL6140552 0.89 MAPT (0.46) L3MBTL1MAPTHTTPSEN1PSEN2
SCHEMBL8322609 0.87 PSEN1 (0.43) NPC1L3MBTL1MAPTHTTPSEN1
SCHEMBL6140500 0.84 RORC (0.41) TDP1NPC1L3MBTL1MAPTHTT
SCHEMBL7602827 0.84 MAPT (0.44) NPC1L3MBTL1MAPTHTTPSEN1
SCHEMBL6140474 0.83 PTPN1 (0.45) L3MBTL1MAPTHTTPSEN1PSEN2
SCHEMBL6140187 0.83 PTPN1 (0.45) L3MBTL1MAPTHTTPSEN1PSEN2
SCHEMBL6140299 0.83 KMT2A (0.44) NPC1MAPTALDH1A1KMT2APTPN1
SCHEMBL8651662 0.82 PSEN1 (0.41) NPC1MAPTHTTPSEN1PSEN2
SCHEMBL6140234 0.82 PSEN1 (0.39) L3MBTL1MAPTHTTPSEN1PSEN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed