SCHEMBL6140299

SCHEMBL6140299

CC(C)(C)OC(=O)COc1ccc([S+](c2ccc(OCC(=O)OC(C)(C)C)cc2)c2ccc(OCc3ccccn3)cc2)cc1.Cc1ccc(C)c(S(=O)(=O)[O-])c1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 2/20 0.44
POLB P06746 1/20 0.41
PARP10 Q53GL7 1/20 0.41
NPC1 O15118 3/20 0.40
RAB9A P51151 3/20 0.40
SMN1; SMN2 Q16637 2/20 0.40
KDM4E B2RXH2 1/20 0.40
ALDH1A1 P00352 1/20 0.40
MAPT P10636 3/20 0.40
MAPK14 Q16539 4/20 0.39
SMO Q99835 4/20 0.39
PTPN1 P18031 1/20 0.39
HIF1A Q16665 1/20 0.38
TRPM8 Q7Z2W7 1/20 0.38
HDAC3 O15379 1/20 0.38
HDAC4 P56524 1/20 0.38
HDAC1 Q13547 1/20 0.38
HDAC7 Q8WUI4 1/20 0.38
HDAC2 Q92769 1/20 0.38
HDAC10 Q969S8 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140653 0.91 POLB (0.46) KMT2APOLBPARP10NPC1RAB9A
SCHEMBL6140452 0.91 POLB (0.46) KMT2APOLBPARP10NPC1RAB9A
SCHEMBL6140422 0.90 KMT2A (0.39) KMT2APOLBPARP10NPC1RAB9A
SCHEMBL6140092 0.87 POLB (0.41) KMT2APOLBPARP10NPC1RAB9A
SCHEMBL6140499 0.87 POLB (0.41) KMT2APOLBPARP10NPC1RAB9A
SCHEMBL6140696 0.87 POLB (0.47) KMT2APOLBPARP10SMN1; SMN2KDM4E
SCHEMBL6140904 0.87 POLB (0.47) KMT2APOLBPARP10SMN1; SMN2KDM4E
SCHEMBL6140500 0.87 RORC (0.41) KMT2ANPC1RAB9ASMN1; SMN2KDM4E
SCHEMBL6140200 0.84 POLB (0.42) KMT2APOLBPARP10SMN1; SMN2KDM4E
SCHEMBL6140170 0.83 TDP1 (0.40) KMT2APOLBNPC1ALDH1A1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed