SCHEMBL6140933

SCHEMBL6140933

Cc1ccc(S(=O)(=O)OS(c2ccc(OCC(=O)OC(C)(C)C)cc2)(c2ccc(OCC(=O)OC(C)(C)C)cc2)c2cccnc2)cc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RAB9A P51151 1/20 0.46
TSHR P16473 1/20 0.45
SMN1; SMN2 Q16637 1/20 0.45
HTT P42858 1/20 0.44
GAA P10253 2/20 0.43
CYP3A4 P08684 1/20 0.43
CYP2C19 P33261 1/20 0.43
TRPM8 Q7Z2W7 2/20 0.41
LMNA P02545 4/20 0.40
PSEN1 P49768 1/20 0.40
PSEN2 P49810 1/20 0.40
APH1B Q8WW43 1/20 0.40
NCSTN Q92542 1/20 0.40
APH1A Q96BI3 1/20 0.40
PSENEN Q9NZ42 1/20 0.40
ALDH1A1 P00352 4/20 0.39
MAPT P10636 2/20 0.39
MEN1 O00255 1/20 0.39
KMT2A Q03164 1/20 0.39
MAPK1 P28482 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140361 1.00 RAB9A (0.46) RAB9ATSHRSMN1; SMN2HTTGAA
SCHEMBL6139987 0.94 SMN1; SMN2 (0.46) RAB9ATSHRSMN1; SMN2LMNAPSEN1
SCHEMBL6140229 0.90 LMNA (0.43) RAB9ATSHRSMN1; SMN2HTTGAA
SCHEMBL8862182 0.90 PTPN1 (0.45) GAALMNAPSEN1PSEN2APH1B
SCHEMBL3197712 0.90 PTPN1 (0.45) GAALMNAPSEN1PSEN2APH1B
SCHEMBL8069409 0.89 PSEN1 (0.47) RAB9AGAALMNAPSEN1PSEN2
SCHEMBL8862149 0.89 PSEN1 (0.47) RAB9AGAALMNAPSEN1PSEN2
SCHEMBL8862196 0.89 PSEN1 (0.47) RAB9AGAALMNAPSEN1PSEN2
SCHEMBL8862156 0.86 PSEN1 (0.43) HTTGAALMNAPSEN1PSEN2
SCHEMBL8862150 0.86 PSEN1 (0.43) HTTGAALMNAPSEN1PSEN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed