Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ABCB11 | O95342 | 1/20 | 0.30 |
| ▸ | CYP2E1 | P05181 | 1/20 | 0.30 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.30 |
| ▸ | HTT | P42858 | 1/20 | 0.30 |
| ▸ | GSDMD | P57764 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30396258 | 0.63 | — | — | |
| SCHEMBL4373736 | 0.62 | ABCB11 (0.30) | ABCB11CYP2E1PTGS1HTTGSDMD | |
| SCHEMBL43362 | 0.61 | — | — | |
| SCHEMBL31376085 | 0.58 | TSHR (0.33) | — | |
| SCHEMBL31257102 | 0.58 | — | — | |
| SCHEMBL28757557 | 0.57 | — | — | |
| SCHEMBL6246304 | 0.55 | — | — | |
| SCHEMBL25967490 | 0.55 | — | — | |
| SCHEMBL25967496 | 0.55 | — | — | |
| SCHEMBL30384811 | 0.53 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6893915-B2 | Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the same | SAMSUNG ELECTRONICS, CO., LTD (KR) | 2005-05-17 | — | — | US | claimed |
| US-20030060042-A1 | Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the same | SAMSUNG ELECTRONICS CO. LTD. | 2003-03-27 | — | — | US | claimed |
| US-10186570-B2 | ALD processes for low leakage current and low equivalent oxide thickness BiTaO films | ENTEGRIS, INC. (US) | 2019-01-22 | — | — | US | disclosed |
| US-20150364537-A1 | ALD PROCESSES FOR LOW LEAKAGE CURRENT AND LOW EQUIVALENT OXIDE THICKNESS BiTaO FILMS | ATMI KOREA CO., LTD (KR) | 2015-12-17 | — | — | US | disclosed |
| WO-2014124056-A1 | ALD PROCESSES FOR LOW LEAKAGE CURRENT AND LOW EQUIVALENT OXIDE THICKNESS BITAO FILMS | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2014-08-14 | — | — | WO | disclosed |
| US-6893915-B2 | Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the same | SAMSUNG ELECTRONICS, CO., LTD (KR) | 2005-05-17 | — | — | US | disclosed |
| US-6893915-B2 | Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the same | SAMSUNG ELECTRONICS, CO., LTD (KR) | 2005-05-17 | — | — | US | disclosed |
| US-20030060042-A1 | Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the same | SAMSUNG ELECTRONICS CO. LTD. | 2003-03-27 | — | — | US | disclosed |
| US-20030060042-A1 | Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the same | SAMSUNG ELECTRONICS CO. LTD. | 2003-03-27 | — | — | US | disclosed |