SCHEMBL6330127

SCHEMBL6330127

O=P(O)(OCl)Oc1ccc(Cl)cc1Cl

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 3/20 0.45
TTR P02766 3/20 0.44
MAPT P10636 2/20 0.44
HPGD P15428 2/20 0.44
SLC6A2 P23975 2/20 0.44
SLC6A3 Q01959 2/20 0.44
NR1I2 O75469 1/20 0.44
LMNA P02545 1/20 0.44
PGR P06401 1/20 0.44
HSP90AA1 P07900 1/20 0.44
ADORA3 P0DMS8 1/20 0.44
HSPA5 P11021 1/20 0.44
CBR1 P16152 1/20 0.44
TBXA2R P21731 1/20 0.44
AGTR1 P30556 1/20 0.44
SMN1; SMN2 Q16637 2/20 0.41
TSHR P16473 2/20 0.41
GGPS1 O95749 1/20 0.40
CA1 P00915 1/20 0.40
CA14 Q9ULX7 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3235427 0.91 TDP1 (0.49) TDP1TTRMAPTHPGDSLC6A2
SCHEMBL11330499 0.87 TDP1 (0.46) TDP1TTRMAPTHPGDSLC6A2
SCHEMBL9494492 0.84 TDP1 (0.44) TDP1TTRMAPTHPGDSLC6A2
SCHEMBL4372630 0.83 INPPL1 (0.52) TDP1TTRMAPTHPGDSLC6A2
SCHEMBL9347220 0.83 CA1 (0.40) MAPTHPGDLMNASMN1; SMN2TSHR
SCHEMBL10336013 0.81 TDP1 (0.47) TDP1TTRMAPTHPGDSLC6A2
SCHEMBL6330123 0.81 TDP1 (0.47) TDP1TTRMAPTHPGDSLC6A2
SCHEMBL1368781 0.81 TDP1 (0.47) TDP1TTRMAPTHPGDSLC6A2
SCHEMBL2062487 0.80 LMNA (0.50) TDP1MAPTLMNANPC1RAB9A
SCHEMBL30540051 0.80 TDP1 (0.50) TDP1TTRMAPTHPGDSLC6A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20030148616-A1 Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same LEE JONG-WON (KR) 2003-08-07 US claimed
US-20030022499-A1 Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2003-01-30 US claimed
CN-106103615-A Metal oxide polymers composite particles for chemical-mechanical planarization 卡博特公司 2016-11-09 CN disclosed
US-6914001-B2 Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-07-05 US disclosed
US-20030148616-A1 Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same LEE JONG-WON (KR) 2003-08-07 US disclosed
US-20030022499-A1 Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2003-01-30 US disclosed