⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL252442 | 0.73 | — | — | |
| SCHEMBL4213064 | 0.73 | ALDH1A1 (0.35) | — | |
| SCHEMBL6178896 | 0.69 | — | — | |
| SCHEMBL31042221 | 0.69 | — | — | |
| SCHEMBL6338522 | 0.69 | — | — | |
| SCHEMBL13339802 | 0.69 | — | — | |
| SCHEMBL13571386 | 0.69 | — | — | |
| SCHEMBL31602089 | 0.69 | — | — | |
| SCHEMBL1296614 | 0.67 | ALDH1A1 (0.30) | — | |
| SCHEMBL504556 | 0.67 | ALDH1A1 (0.30) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119767680-A | Germanium-doped charge trapping layers, related devices, related systems, and related methods | ASM IP私人控股有限公司 | 2025-04-04 | — | — | CN | claimed |
| CN-119730718-A | Method for forming doped hafnium zirconium oxide layer on substrate | ASM IP私人控股有限公司 | 2025-03-28 | — | — | CN | claimed |
| US-20250361606-A1 | METAL-FLUORIDE THIN FILMS AND DEPOSITION METHODS | LOTUS APPLIED TECH LLC (US) | 2025-11-27 | — | — | US | disclosed |
| CN-120060822-A | Metal and phosphorus containing membranes, methods and systems for producing the same and uses thereof | ASM IP私人控股有限公司 | 2025-05-30 | — | — | CN | disclosed |
| CN-119767680-A | Germanium-doped charge trapping layers, related devices, related systems, and related methods | ASM IP私人控股有限公司 | 2025-04-04 | — | — | CN | disclosed |
| CN-119730718-A | Method for forming doped hafnium zirconium oxide layer on substrate | ASM IP私人控股有限公司 | 2025-03-28 | — | — | CN | disclosed |
| CN-117867469-A | Method for depositing transition metal dichalcogenides | IMEC 非营利协会 | 2024-04-12 | — | — | CN | disclosed |
| EP-2624063-B1 | ELECTRIFICATION MEMBER, PROCESS CARTRIDGE, AND ELECTRONIC PHOTOGRAPHIC DEVICE | CANON KK (JP) | 2016-11-09 | — | — | EP | disclosed |
| US-8971766-B2 | Electrophotographic member, process cartridge and electrophotographic apparatus | CANON KABUSHIKI KAISHA (JP) | 2015-03-03 | — | — | US | disclosed |
| US-8755714-B2 | Charging member, process cartridge and electrophotographic apparatus | CANON KABUSHIKI KAISHA (JP) | 2014-06-17 | — | — | US | disclosed |
| US-20130266338-A1 | ELECTROPHOTOGRAPHIC MEMBER, PROCESS CARTRIDGE AND ELECTROPHOTOGRAPHIC APPARATUS | CANON KABUSHIKI KAISHA (JP) | 2013-10-10 | — | — | US | disclosed |
| EP-2624063-A1 | ELECTRIFICATION MEMBER, PROCESS CARTRIDGE, AND ELECTRONIC PHOTOGRAPHIC DEVICE | Canon Kabushiki Kaisha (JP) | 2013-08-07 | — | — | EP | disclosed |
| US-20120141159-A1 | CHARGING MEMBER, PROCESS CARTRIDGE AND ELECTROPHOTOGRAPHIC APPARATUS | CANON KABUSHIKI KAISHA (JP) | 2012-06-07 | — | — | US | disclosed |
| CN-101619151-A | Process for producing propylene block copolymer | SUMITOMO CHEMICAL CO | 2010-01-06 | — | — | CN | disclosed |
| US-6939760-B2 | Method for semiconductor device manufacturing to include multistage chemical vapor deposition of material oxide film | ELPIDA MEMORY, INC. (JP) | 2005-09-06 | — | — | US | disclosed |
| US-20040004870-A1 | Method for manufacturing semiconductor device | ELPIDA MEMORY, INC | 2004-01-08 | — | — | US | disclosed |