SCHEMBL6345805

SCHEMBL6345805

CC(C)(C)OC(=O)c1cc2ccccc2c(O)c1C(=O)OC(C)(C)C

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 4/20 0.43
KMT2A Q03164 4/20 0.43
MAPT P10636 1/20 0.43
ALDH1A1 P00352 3/20 0.41
HPGD P15428 3/20 0.41
KDM4E B2RXH2 2/20 0.41
NPSR1 Q6W5P4 1/20 0.41
POLB P06746 1/20 0.40
GPR35 Q9HC97 1/20 0.40
SMN1; SMN2 Q16637 1/20 0.39
GABRP O00591 1/20 0.39
GABRD O14764 1/20 0.39
GABRA1 P14867 1/20 0.39
GABRB1 P18505 1/20 0.39
GABRG2 P18507 1/20 0.39
GABRB3 P28472 1/20 0.39
GABRA5 P31644 1/20 0.39
GABRA3 P34903 1/20 0.39
GABRA2 P47869 1/20 0.39
GABRB2 P47870 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5622580 0.84 MEN1 (0.42) MEN1KMT2AMAPTALDH1A1HPGD
SCHEMBL482475 0.81 ALDH1A1 (0.53) MEN1KMT2AMAPTALDH1A1HPGD
SCHEMBL589725 0.80 MEN1 (0.59) MEN1KMT2AMAPTALDH1A1HPGD
SCHEMBL2222226 0.80 LDHA (0.57) MEN1KMT2AMAPTKDM4ESMN1; SMN2
SCHEMBL29721447 0.80 ALDH1A1 (0.43) MEN1KMT2AMAPTALDH1A1HPGD
SCHEMBL28734150 0.79 ALDH1A1 (0.45) MEN1KMT2AALDH1A1HPGDKDM4E
SCHEMBL7633074 0.77 MEN1 (0.42) MEN1KMT2AMAPTALDH1A1HPGD
SCHEMBL29388711 0.77 LDHA (0.53) MEN1KMT2AMAPTKDM4EPOLB
SCHEMBL31649200 0.75 ALDH1A1 (0.45) MEN1KMT2AMAPTALDH1A1HPGD
SCHEMBL8117058 0.75 GRIN2D (0.59) MEN1KMT2AMAPTALDH1A1HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6974658-B2 HIGH MOLECULAR COMPOUND, MONOMER COMPOUNDS AND PHOTOSENSITIVE COMPOSITION FOR PHOTORESIST, PATTERN FORMING METHOD UTILIZING PHOTOSENSITIVE COMPOSITION, AND METHOD OF MANUFACTURING ELECTRONIC COMPONENTS KABUSHIKI KAISHA TOSHIBA (JP) 2005-12-13 US disclosed