Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HTR1A | P08908 | 1/20 | 0.38 |
| ▸ | HTR7 | P34969 | 1/20 | 0.38 |
| ▸ | ABCB1 | P08183 | 2/20 | 0.38 |
| ▸ | CEL | P19835 | 2/20 | 0.37 |
| ▸ | PTGDR2 | Q9Y5Y4 | 1/20 | 0.36 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.35 |
| ▸ | CHRNB2 | P17787 | 2/20 | 0.33 |
| ▸ | CHRNA4 | P43681 | 2/20 | 0.33 |
| ▸ | PDCD1 | Q15116 | 1/20 | 0.33 |
| ▸ | CD274 | Q9NZQ7 | 1/20 | 0.33 |
| ▸ | ADRA2A | P08913 | 1/20 | 0.33 |
| ▸ | ADRA2B | P18089 | 1/20 | 0.33 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.33 |
| ▸ | KMO | O15229 | 1/20 | 0.33 |
| ▸ | PTPRC | P08575 | 1/20 | 0.33 |
| ▸ | PTPRF | P10586 | 1/20 | 0.33 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.33 |
| ▸ | CDC25B | P30305 | 1/20 | 0.33 |
| ▸ | CYP11B2 | P19099 | 1/20 | 0.32 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Sulfuric Acid SCHEMBL15345296 | 0.86 | PTGS2 (0.40) | HTR1AHTR7ABCB1CELPTGDR2 | |
| SCHEMBL239469 | 0.85 | ABCB1 (0.43) | HTR1AHTR7ABCB1CELPTGDR2 | |
| Trifluoromethanesulfonic Acid SCHEMBL7846491 | 0.83 | PTGS2 (0.38) | ABCB1PTGDR2PTGS2CHRNB2CHRNA4 | |
| SCHEMBL14353365 | 0.83 | ABCB1 (0.42) | HTR1AHTR7ABCB1CELPTGDR2 | |
| SCHEMBL777873 | 0.83 | CEL (0.41) | HTR1AHTR7ABCB1CELPTGDR2 | |
| SCHEMBL6346792 | 0.82 | HTR1A (0.39) | HTR1AHTR7CELPTGDR2PTGS2 | |
| SCHEMBL23735529 | 0.81 | PTGDR2 (0.42) | HTR1AHTR7PTGDR2PTGS2ADRA2A | |
| SCHEMBL5887373 | 0.81 | PTGDR2 (0.42) | HTR1AHTR7PTGDR2PTGS2ADRA2A | |
| SCHEMBL6349737 | 0.79 | HTR1A (0.40) | HTR1AHTR7CELPTGDR2PTGS2 | |
| SCHEMBL7847920 | 0.79 | PTGS2 (0.40) | PTGS2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111198480-B | Photosensitive resin composition, pattern forming method and antireflection film | 信越化学工业株式会社 | 2025-02-11 | — | — | CN | disclosed |
| CN-109976091-B | Photosensitive resin composition, pattern forming method, and manufacture of optoelectronic semiconductor device | 信越化学工业株式会社 | 2024-09-27 | — | — | CN | disclosed |
| EP-3266759-B1 | COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING COMPOUND OR RESIN | MITSUBISHI GAS CHEMICAL CO (JP) | 2023-09-13 | — | — | EP | disclosed |
| WO-2023053877-A1 | PHOTOACID GENERATOR, RESIST COMPOSITION, AND METHOD FOR PRODUCING DEVICE USING SAID RESIST COMPOSITION | 東洋合成工業株式会社 | 2023-04-06 | — | — | WO | disclosed |
| EP-3495434-B1 | NOVEL TETRACARBOXYLIC DIANHYDRIDE, POLYIMIDE RESIN AND METHOD FOR PRODUCING THE SAME, PHOTOSENSITIVE RESIN COMPOSITIONS, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC PARTS | SHINETSU CHEMICAL CO (JP) | 2020-12-30 | — | — | EP | disclosed |
| EP-2080750-B1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-07-29 | — | — | EP | disclosed |
| EP-3495434-A1 | NOVEL TETRACARBOXYLIC DIANHYDRIDE, POLYIMIDE RESIN AND METHOD FOR PRODUCING THE SAME, PHOTOSENSITIVE RESIN COMPOSITIONS, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC PARTS | Shin-Etsu Chemical Co., Ltd. (JP) | 2019-06-12 | — | — | EP | disclosed |
| EP-2955175-B1 | USE OF 9-[1,1'-BIPHENYL]-4-YL-9H-XANTHENE-2,7-DIOL AND SIMILAR COMPOUNDS FOR FORMING RESINS FOR USE IN UNDERLAYER FILMS FOR LITHOGRAPHY AND IN PATTERN FORMING METHODS | MITSUBISHI GAS CHEMICAL CO (JP) | 2018-04-04 | — | — | EP | disclosed |
| EP-3266759-A1 | COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING COMPOUND OR RESIN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-01-10 | — | — | EP | disclosed |
| EP-2955175-A1 | COMPOUND, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMATION METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2015-12-16 | — | — | EP | disclosed |
| US-6878508-B2 | Resist patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-12 | — | — | US | disclosed |
| US-6048661-A | POLYMER WITH HYDROXY AND CARBOXY GROUPS AND ETHER ESTER GROUPS FOR PHOTORESISTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-04-11 | — | — | US | disclosed |