Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 1/20 | 0.43 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.41 |
| ▸ | PRKCA | P17252 | 1/20 | 0.36 |
| ▸ | HMGCR | P04035 | 4/20 | 0.36 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.35 |
| ▸ | CYP4F2 | P78329 | 1/20 | 0.35 |
| ▸ | CYP4A11 | Q02928 | 1/20 | 0.35 |
| ▸ | MMP8 | P22894 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 2/20 | 0.32 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.31 |
| ▸ | LMNA | P02545 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16520399 | 0.87 | TDP1 (0.44) | MAPTMAPK1PRKCAHMGCRHSD17B10 | |
| SCHEMBL18104408 | 0.86 | TDP1 (0.43) | MAPTMAPK1PRKCAHMGCRCYP4F2 | |
| SCHEMBL801671 | 0.86 | TDP1 (0.43) | MAPTMAPK1PRKCAHMGCRCYP4F2 | |
| SCHEMBL12126256 | 0.86 | TDP1 (0.43) | MAPTMAPK1PRKCAHMGCRCYP4F2 | |
| SCHEMBL5068175 | 0.85 | MAPT (0.44) | MAPTMAPK1HMGCRHSD17B10CYP4F2 | |
| Dimethylaminoethanol SCHEMBL28231085 | 0.85 | MAPT (0.36) | MAPTMAPK1PRKCAHMGCRCYP4F2 | |
| SCHEMBL17898146 | 0.85 | PRKCA (0.37) | PRKCAHMGCRCYP4F2CYP4A11MMP8 | |
| SCHEMBL14769605 | 0.85 | PRKCA (0.37) | MAPTPRKCAHMGCRCYP4F2CYP4A11 | |
| SCHEMBL2681020 | 0.85 | TSHR (0.42) | MAPK1PRKCAHMGCRCYP4F2CYP4A11 | |
| SCHEMBL12135548 | 0.85 | HMGCR (0.40) | PRKCAHMGCRCYP4F2CYP4A11LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 157 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240219834-A1 | METHOD FOR FORMING A RESIST PATTERN | NISSAN CHEMICAL CORPORATION (JP) | 2024-07-04 | — | — | US | disclosed |
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230244143-A9 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND | JSR CORPORATION (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230236506-A2 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-07-27 | — | — | US | disclosed |
| US-20230236501-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND | JSR CORPORATION (JP) | 2023-07-27 | — | — | US | disclosed |
| US-20230229082-A2 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-07-20 | — | — | US | disclosed |
| US-11692050-B2 | Photo-alignment copolymer, binder composition, binder layer, optical laminate, and image display device | FUJIFILM CORPORATION (JP) | 2023-07-04 | — | — | US | disclosed |
| US-11675270-B2 | Resist underlayer film-forming composition | NISSAN CHEMICAL CORPORATION (JP) | 2023-06-13 | — | — | US | disclosed |
| US-20230159775-A1 | INKJET INK | KYOCERA DOCUMENT SOLUTIONS INC. (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230150254-A1 | ON-PRESS DEVELOPMENT TYPE LITHOGRAPHIC PRINTING PLATE PRECURSOR, METHOD OF PREPARING LITHOGRAPHIC PRINTING PLATE, AND LITHOGRAPHIC PRINTING METHOD | FUJIFILM CORPORATION (JP) | 2023-05-18 | — | — | US | disclosed |
| US-7462382-B2 | Optical compensating sheet, production method thereof, optical film, and polarizing plate and liquid crystal display device using the same | FUJIFILM CORPORATION (JP) | 2008-12-09 | — | — | US | disclosed |
| US-7416833-B2 | Photoresist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-08-26 | — | — | US | disclosed |
| US-7309560-B2 | Composition for forming anti-reflective coating | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2007-12-18 | — | — | US | disclosed |
| US-20070238029-A1 | Underlayer Coating Forming Composition for Lithography Containing Naphthalene Ring Having Halogen Atom | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2007-10-11 | — | — | US | disclosed |
| US-20070231738-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070231745-A1 | Method for preparation of lithographic printing plate and lithographic printing plate precursor | FUJIFILM CORPORATION (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070190459-A1 | Resist underlayer coating forming composition for mask blank, mask blank and mask | HOYA CORPORATION (JP) | 2007-08-16 | — | — | US | disclosed |
| US-20070178407-A1 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-08-02 | — | — | US | disclosed |
| US-20050042536-A1 | Photosensitive resin composition comprising quinonediazide sulfate ester compound | DONGJIN SEMICHEM CO. LTD. (KR) | 2005-02-24 | — | — | US | disclosed |
| WO-2003036388-A1 | PHOTOSNESITIVE RESIN COMPOSITION COMPRISING QUINONEDIAZIDE SULFATE ESTER COMPOUND | DONGJIN SEMICHEM CO., LTD. (KR) | 2003-05-01 | — | — | WO | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230229082-A2 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN | RAD51, RER1, RAD1 | MAPT 3874/4885MAPK1 1803/4885PRKCA 4722/4885 |
| US-20230236501-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND | RER1, RAD51, RAD1 | MAPT 2657/4885MAPK1 848/4885PRKCA 4579/4885 |
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | RER1, RAD51, RFT1 | MAPT 2356/4885MAPK1 459/4885PRKCA 3447/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.