Known targets — ChEMBL curated mechanism
ACHEBDKRB2CHRM1CHRM2CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNGGUCY1A1GUCY1A2GUCY1B1GUCY1B2NAMPTPTAFRSLC10A2SLC6A2SLC6A3TACR1dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL2724834 | 0.87 | — | — | |
| Hydrochloric Acid SCHEMBL28367342 | 0.82 | CA2 (0.33) | — | |
| Hydrochloric Acid SCHEMBL160460 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL608 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL693872 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL31668382 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL9453842 | 0.82 | CA2 (0.33) | — | |
| Hydrochloric Acid SCHEMBL1285698 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL7176200 | 0.82 | CA2 (0.33) | — | |
| Hydrochloric Acid SCHEMBL27964571 | 0.82 | CA2 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20050130844-A1 | Metal oxide semiconductor thin film and method of producing the same | NATIONAL INST. OF ADVANCED IND. SCIENCE AND TECH. (JP) | 2005-06-16 | — | — | US | claimed |
| US-20030122122-A1 | Metal oxide semiconductor thin film and method of producing the same | NATIONAL INST. OF ADVANCED IND. SCIENCE AND TECH (JP) | 2003-07-03 | — | — | US | claimed |
| EP-1324398-A2 | Metal oxide semiconductor thin film and method of producing the same | National Institute of Advanced Industrial Science and Technology (JP) | 2003-07-02 | — | — | EP | claimed |
| US-9764387-B2 | Polycrystalline diamond compact with increased impact resistance | PETREE RUSTY (US) | 2017-09-19 | — | — | US | disclosed |
| US-20150158085-A1 | POLYCRYSTALLINE DIAMOND COMPACT WITH INCREASED IMPACT RESISTANCE | PETREE RUSTY (US) | 2015-06-11 | — | — | US | disclosed |
| US-8986406-B2 | Polycrystalline diamond compact with increased impact resistance | PETREE RUSTY (US) | 2015-03-24 | — | — | US | disclosed |
| US-20140157682-A1 | POLYCRYSTALLINE DIAMOND COMPACT WITH INCREASED IMPACT RESISTANCE | PETREE RUSTY (US) | 2014-06-12 | — | — | US | disclosed |
| WO-2014089451-A1 | POLYCRYSTALLINE DIAMOND COMPACT WITH INCREASED IMPACT RESISTANCE | PETREE RUSTY (US) | 2014-06-12 | — | — | WO | disclosed |
| US-20050130844-A1 | Metal oxide semiconductor thin film and method of producing the same | NATIONAL INST. OF ADVANCED IND. SCIENCE AND TECH. (JP) | 2005-06-16 | — | — | US | disclosed |
| US-20030122122-A1 | Metal oxide semiconductor thin film and method of producing the same | NATIONAL INST. OF ADVANCED IND. SCIENCE AND TECH (JP) | 2003-07-03 | — | — | US | disclosed |
| EP-1324398-A2 | Metal oxide semiconductor thin film and method of producing the same | National Institute of Advanced Industrial Science and Technology (JP) | 2003-07-02 | — | — | EP | disclosed |