SCHEMBL6430798

SCHEMBL6430798

OCC(CO)(CO)OCC1CO1

nearest known ligand 0.54

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 8/20 0.54
TSHR P16473 5/20 0.40
MAPK1 P28482 1/20 0.40
TP53 P04637 4/20 0.35
CYP3A4 P08684 2/20 0.35
SMN1; SMN2 Q16637 2/20 0.34
TDP1 Q9NUW8 3/20 0.33
MAPT P10636 2/20 0.32
HPGD P15428 2/20 0.32
HIF1A Q16665 2/20 0.32
MEN1 O00255 1/20 0.32
CYP1A2 P05177 1/20 0.32
KMT2A Q03164 1/20 0.32
PPARG P37231 1/20 0.32
GLA P06280 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3124072 0.87 ALDH1A1 (0.47) ALDH1A1TSHRMAPK1TP53CYP3A4
SCHEMBL23256373 0.86 TSHR (0.52) ALDH1A1TSHRMAPK1TP53CYP3A4
SCHEMBL480723 0.84 ALDH1A1 (0.44) ALDH1A1TSHRMAPK1TP53CYP3A4
Bicarbonate SCHEMBL19178452 0.78 ALDH1A1 (0.39) ALDH1A1TSHRMAPK1TP53CYP3A4
SCHEMBL1192277 0.77 ALDH1A1 (0.61) ALDH1A1TSHRMAPK1TP53CYP3A4
SCHEMBL13898344 0.75 ALDH1A1 (0.58) ALDH1A1TSHRMAPK1TP53CYP3A4
SCHEMBL19971982 0.74 ALDH1A1 (0.47) ALDH1A1TSHRMAPK1TP53CYP3A4
SCHEMBL11322842 0.74 ALDH1A1 (0.47) ALDH1A1TSHRMAPK1TP53CYP3A4
SCHEMBL15256784 0.74 ALDH1A1 (0.64) ALDH1A1TSHRMAPK1TP53CYP3A4
SCHEMBL5598818 0.73 ALDH1A1 (0.45) ALDH1A1TSHRMAPK1TP53CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230350293-A1 I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR REDUCING HEIGHT DIFFERENCE BETWEEN CENTER AND EDGE AND REDUCING LER, AND I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR IMPROVING PROCESS MARGIN YOUNG CHANG CHEMICAL CO., LTD (KR) 2023-11-02 US claimed
EP-4220301-A1 I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR REDUCING HEIGHT DIFFERENCE BETWEEN CENTER AND EDGE AND REDUCING LER, AND I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR IMPROVING PROCESS MARGIN Young Chang Chemical Co., Ltd. (KR) 2023-08-02 EP claimed
CN-109154776-A Chemical amplifying type negative photoresist composition 荣昌化学制品株式会社 2019-01-04 CN claimed
CN-107924124-A Negative photoresist composition for I-line with excellent etching resistance 荣昌化学制品株式会社 2018-04-17 CN claimed
CN-107850841-A Negative photoresist composition for KrF laser for forming semiconductor pattern 荣昌化学制品株式会社 2018-03-27 CN claimed
US-6969919-B2 Semiconductor package production method and semiconductor package TEXAS INSTRUMENTS INCORPORATED (US) 2005-11-29 US claimed
US-20050003577-A1 Semiconductor package production method and semiconductor package YAJIMA KIYOSHI (JP) 2005-01-06 US claimed
US-6774496-B2 Semiconductor package with a thermoset bond TEXAS INSTRUMENTS INCORPORATED 2004-08-10 US claimed
US-6716674-B2 Method of forming a semiconductor package TEXAS INSTRUMENTS INCORPORATED 2004-04-06 US claimed
US-20230350293-A1 I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR REDUCING HEIGHT DIFFERENCE BETWEEN CENTER AND EDGE AND REDUCING LER, AND I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR IMPROVING PROCESS MARGIN YOUNG CHANG CHEMICAL CO., LTD (KR) 2023-11-02 US disclosed
EP-4220301-A1 I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR REDUCING HEIGHT DIFFERENCE BETWEEN CENTER AND EDGE AND REDUCING LER, AND I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR IMPROVING PROCESS MARGIN Young Chang Chemical Co., Ltd. (KR) 2023-08-02 EP disclosed
CN-109154776-A Chemical amplifying type negative photoresist composition 荣昌化学制品株式会社 2019-01-04 CN disclosed
CN-109073973-A KrF laser negative photoresist composition with high-resolution and high aspect ratio 荣昌化学制品株式会社 2018-12-21 CN disclosed
CN-107924124-A Negative photoresist composition for I-line with excellent etching resistance 荣昌化学制品株式会社 2018-04-17 CN disclosed
US-6969919-B2 Semiconductor package production method and semiconductor package TEXAS INSTRUMENTS INCORPORATED (US) 2005-11-29 US disclosed
US-20050003577-A1 Semiconductor package production method and semiconductor package YAJIMA KIYOSHI (JP) 2005-01-06 US disclosed
US-6774496-B2 Semiconductor package with a thermoset bond TEXAS INSTRUMENTS INCORPORATED 2004-08-10 US disclosed
US-6716674-B2 Method of forming a semiconductor package TEXAS INSTRUMENTS INCORPORATED 2004-04-06 US disclosed
US-20030153121-A1 Semiconductor package production method and semiconductor package TEXAS INSTRUMENTS INCORPORATED (US) 2003-08-14 US disclosed
US-20030049883-A1 Semiconductor package production method and semiconductor package TEXAS INSTRUMENTS INCORPORATED 2003-03-13 US disclosed