⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1470143 | 0.80 | LMNA (0.55) | — | |
| SCHEMBL3388540 | 0.80 | LMNA (0.55) | — | |
| SCHEMBL4382282 | 0.79 | ALDH1A1 (0.39) | — | |
| SCHEMBL2884218 | 0.78 | — | — | |
| SCHEMBL16305432 | 0.78 | — | — | |
| SCHEMBL4446589 | 0.78 | — | — | |
| SCHEMBL50343 | 0.78 | — | — | |
| SCHEMBL5484684 | 0.78 | — | — | |
| SCHEMBL23161023 | 0.77 | LMNA (0.46) | — | |
| SCHEMBL7785605 | 0.77 | LMNA (0.46) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1051 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20100239982-A1 | Photoresist composition with high etching resistance | CHEIL INDUSTRIES, INC. (KR) | 2010-09-23 | — | — | US | claimed |
| US-20100233620-A1 | Copolymer and photoresist composition including the same | CHEIL INDUSTRIES, INC. (KR) | 2010-09-16 | — | — | US | claimed |
| WO-2009069848-A1 | NOVEL COPOLYMERS AND PHOTORESIST COMPOSITION INCLUDING THE SAME | CHEIL INDUSTRIES INC. (KR) | 2009-06-04 | — | — | WO | claimed |
| WO-2009069847-A1 | PHOTORESIST COMPOSITION WITH HIGH ETCHING RESISTANCE | CHEIL INDUSTRIES INC. (KR) | 2009-06-04 | — | — | WO | claimed |
| US-6730451-B2 | FLUOROACRYLATE POLYMERS; TRANSPARENCY; PREVENTING NEGATIVE WORKING; LOW ABSORPTION OF FLUORINE EXCIMER LASER LIGHT; HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-05-04 | — | — | US | claimed |
| US-6623909-B2 | Polysiloxane | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-09-23 | — | — | US | claimed |
| US-6596463-B2 | Photosensitivity, resolution, chemical resistance | SHIN-ETSU CHEMICAL, CO., LTD. (JP) | 2003-07-22 | — | — | US | claimed |
| US-6461790-B1 | NOVEL POLYMER HAVING HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADIATION OF UP TO 300 NANOMETERS; RESIST MATERIALS HAVE SUFFICIENT TRANSPARENCY IN REGION OF EXCIMER LASER AND SATISFY RESOLUTION AND SENSITIVITY REQUIREMENTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-08 | — | — | US | claimed |
| US-6461789-B1 | NOVEL POLYMER HAVING HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADIATION OF UP TO 300 NANOMETERS; RESIST MATERIALS HAVE SUFFICIENT TRANSPARENCY IN REGION OF EXCIMER LASERS, AND SATISFY RESOLUTION AND SENSITIVITY REQUIREMENTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-08 | — | — | US | claimed |
| US-6436606-B1 | POLYMERS AND PHOTORESISTS COATING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-20 | — | — | US | claimed |
| US-6369279-B1 | STYRENE WITH ETHER OR FLUORINE GROUPS FOR POLYMERS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-04-09 | — | — | US | claimed |
| US-20240241442-A1 | Positive Resist Material And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-18 | — | — | US | disclosed |
| US-20240210830-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-27 | — | — | US | disclosed |
| US-12013639-B2 | Positive resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-18 | — | — | US | disclosed |
| US-20240184200-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-06 | — | — | US | disclosed |
| US-6027854-A | ACTINIC RADIATION-SENSITIVE, CROSSLINKED TERPOLYMER CONTAINING STYRENIC GROUPS RING-SUBSTITUTED WITH HYDROXYL, HYDROXYALKYLOXY, CARBOXYALKYLOXY MOIETIES AND ACID LABILE GROUPS; ETCHING AND HEAT RESISTANCE | SHIN-ETSU CHEMICAL CO., LTD. | 2000-02-22 | — | — | US | disclosed |
| US-5972560-A | A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
| EP-0908783-A1 | Resist compositions, their preparation and use for patterning processes | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-04-14 | — | — | EP | disclosed |
| EP-0908473-A1 | Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-04-14 | — | — | EP | disclosed |
| EP-0887705-A1 | Resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1998-12-30 | — | — | EP | disclosed |