Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 1/20 | 0.31 |
| ▸ | CA2 | P00918 | 1/20 | 0.31 |
| ▸ | CA4 | P22748 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL6821487 | 0.89 | CA1 (0.34) | CA1CA2CA4KMT2A | |
| Trifluoromethanesulfonic Acid SCHEMBL5415939 | 0.84 | CA1 (0.30) | CA1CA2CA4 | |
| Trifluoromethanesulfonic Acid SCHEMBL515932 | 0.81 | CA1 (0.40) | CA1CA2CA4KMT2A | |
| Trifluoromethanesulfonic Acid SCHEMBL6140329 | 0.79 | KMT2A (0.35) | CA1CA2CA4KMT2A | |
| Trifluoromethanesulfonic Acid SCHEMBL6140981 | 0.78 | CA1 (0.37) | CA1CA2CA4KMT2A | |
| SCHEMBL6823929 | 0.77 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL65803 | 0.77 | KMT2A (0.39) | CA1CA2CA4KMT2A | |
| SCHEMBL6817731 | 0.76 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL4410247 | 0.73 | KMT2A (0.36) | CA1CA2CA4KMT2A | |
| Trifluoromethanesulfonic Acid SCHEMBL516028 | 0.73 | KMT2A (0.37) | CA1CA2CA4KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 429 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4375750-A1 | FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE | ADEKA CORPORATION (JP) | 2024-05-29 | — | — | EP | disclosed |
| WO-2024090369-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | 株式会社ADEKA | 2024-05-02 | — | — | WO | disclosed |
| US-20240025909-A1 | COMPOUND AND COMPOSITION | ADEKA CORPORATION (JP) | 2024-01-25 | — | — | US | disclosed |
| EP-4265614-A1 | COMPOUND AND COMPOSITION | ADEKA CORPORATION (JP) | 2023-10-25 | — | — | EP | disclosed |
| EP-3266759-B1 | COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING COMPOUND OR RESIN | MITSUBISHI GAS CHEMICAL CO (JP) | 2023-09-13 | — | — | EP | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| EP-2384457-B1 | COATING COMPOSITIONS | MERCK PATENT GMBH (DE) | 2022-07-06 | — | — | EP | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| US-11143962-B2 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-10-12 | — | — | US | disclosed |
| US-11137686-B2 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-10-05 | — | — | US | disclosed |
| US-6280898-B1 | PHOTORESISTS PATTERNS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-08-28 | — | — | US | disclosed |
| EP-1126322-A2 | Fluorine-containing polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-08-22 | — | — | EP | disclosed |
| EP-1096318-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1096317-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1085377-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-03-21 | — | — | EP | disclosed |
| EP-1053985-A1 | Resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2000-11-22 | — | — | EP | disclosed |
| US-6147249-A | ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-11-14 | — | — | US | disclosed |
| EP-1031879-A1 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-08-30 | — | — | EP | disclosed |
| EP-1004568-A2 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-31 | — | — | EP | disclosed |
| US-5972560-A | A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20240025909-A1 | COMPOUND AND COMPOSITION | C5, C1R, HEATR1 | CA1 1072/4885CA2 2545/4885CA4 2566/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CA1 161/4885CA2 1466/4885CA4 1504/4885 |
| US-11137686-B2 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method | MLLT1, PRDM9, NAP1L1 | CA1 356/4885CA2 1121/4885CA4 1306/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CA1 161/4885CA2 1466/4885CA4 1504/4885 |
| US-11143962-B2 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method | MLLT1, MLLT3, KDM2B | CA1 140/4885CA2 595/4885CA4 912/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.