SCHEMBL645706

SCHEMBL645706

F[Si](Oc1ccccc1)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 3/20 0.47
TSHR P16473 2/20 0.47
CA4 P22748 1/20 0.43
MAOA P21397 1/20 0.42
KCNA3 P22001 1/20 0.39
CA5A P35218 1/20 0.38
CA5B Q9Y2D0 1/20 0.38
NR1H2 P55055 1/20 0.36
BAX Q07812 1/20 0.36
KMT2A Q03164 2/20 0.36
KCNH2 Q12809 1/20 0.36
KDM4E B2RXH2 1/20 0.36
GLA P06280 1/20 0.36
MAPT P10636 1/20 0.36
TAAR1 Q96RJ0 1/20 0.35
ALDH1A1 P00352 1/20 0.35
RECQL P46063 1/20 0.35
CA1 P00915 1/20 0.35
CA2 P00918 1/20 0.35
CA9 Q16790 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL646525 0.78 LTA4H (0.50) LTA4HTSHRCA4MAOAKCNA3
SCHEMBL301726 0.78 LTA4H (0.50) LTA4HTSHRCA4MAOAKCNA3
SCHEMBL11423330 0.76 LTA4H (0.38) LTA4HTSHRCA4MAOAKCNA3
Ammonia Solution, Strong SCHEMBL7969744 0.76 LTA4H (0.38) LTA4HTSHRCA4MAOAKCNA3
Lithium Ion SCHEMBL7967683 0.76 LTA4H (0.38) LTA4HTSHRCA4MAOAKCNA3
SCHEMBL15653550 0.75 LTA4H (0.47) LTA4HTSHRCA4MAOAKCNA3
SCHEMBL22580516 0.75 TSHR (0.36) LTA4HTSHRCA4KCNA3CA5A
SCHEMBL1050253 0.75 LTA4H (0.41) LTA4HTSHRCA4MAOAKCNA3
SCHEMBL1040748 0.73 LTA4H (0.45) LTA4HTSHRCA4MAOAKCNA3
SCHEMBL645275 0.73 LTA4H (0.45) LTA4HTSHRCA4MAOAKCNA3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 119 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
US-9050624-B2 Film-forming composition for imprinting, method of manufacturing a structure, and structure TOKYO OHKA KOGYO CO., LTD. (JP) 2015-06-09 US disclosed
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
EP-1746122-B1 METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE JSR CORP (JP) 2013-06-12 EP disclosed
US-8450045-B2 Pattern forming method JSR CORPORATION (JP) 2013-05-28 US disclosed
EP-1705207-B1 METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM JSR CORP (JP) 2012-10-24 EP disclosed
US-8268403-B2 Curing a coating of a siloxane compound and a carbosilane compound using ultraviolet radiation; a low relative dielectric constant, excellent chemical resistance, plasma resistance, mechanical strength JSR CORPORATION (JP) 2012-09-18 US disclosed
US-20120122036-A1 PATTERN FORMING METHOD JSR CORPORATION (JP) 2012-05-17 US disclosed
US-8173348-B2 Method of forming pattern and composition for forming of organic thin-film for use therein JSR CORPORATION (JP) 2012-05-08 US disclosed
EP-1146092-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-17 EP disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1127929-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-08-29 EP disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1117102-A2 Method of manufacturing material for forming insulating film JSR Corporation (JP) 2001-07-18 EP disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed