Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LTA4H | P09960 | 3/20 | 0.50 |
| ▸ | TSHR | P16473 | 1/20 | 0.50 |
| ▸ | CA4 | P22748 | 1/20 | 0.45 |
| ▸ | KCNA3 | P22001 | 1/20 | 0.41 |
| ▸ | CA5A | P35218 | 1/20 | 0.39 |
| ▸ | CA5B | Q9Y2D0 | 1/20 | 0.39 |
| ▸ | NR1H2 | P55055 | 1/20 | 0.38 |
| ▸ | BAX | Q07812 | 1/20 | 0.38 |
| ▸ | MAOA | P21397 | 1/20 | 0.38 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.37 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.37 |
| ▸ | GLA | P06280 | 1/20 | 0.37 |
| ▸ | MAPT | P10636 | 1/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.37 |
| ▸ | TAAR1 | Q96RJ0 | 1/20 | 0.36 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.36 |
| ▸ | RECQL | P46063 | 1/20 | 0.36 |
| ▸ | CA1 | P00915 | 1/20 | 0.36 |
| ▸ | CA2 | P00918 | 1/20 | 0.36 |
| ▸ | CA9 | Q16790 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL974881 | 0.81 | CA4 (0.48) | LTA4HTSHRCA4KCNA3CA5A | |
| SCHEMBL301726 | 0.80 | LTA4H (0.50) | LTA4HTSHRCA4KCNA3CA5A | |
| Potassium Ion SCHEMBL29139750 | 0.79 | LTA4H (0.43) | LTA4HTSHRCA4KCNA3CA5A | |
| SCHEMBL974843 | 0.79 | LTA4H (0.38) | LTA4HTSHRCA4KCNA3CA5A | |
| SCHEMBL15653550 | 0.78 | LTA4H (0.47) | LTA4HTSHRCA4KCNA3CA5A | |
| SCHEMBL645706 | 0.78 | LTA4H (0.47) | LTA4HTSHRCA4KCNA3CA5A | |
| SCHEMBL1130623 | 0.77 | CA4 (0.43) | LTA4HTSHRCA4KCNA3CA5A | |
| SCHEMBL645275 | 0.75 | LTA4H (0.45) | LTA4HTSHRCA4KCNA3CA5A | |
| SCHEMBL1041277 | 0.75 | LTA4H (0.45) | LTA4HTSHRCA4KCNA3CA5A | |
| SCHEMBL1042948 | 0.75 | LTA4H (0.45) | LTA4HTSHRCA4KCNA3CA5A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 189 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12346026-B2 | Composition for forming underlayer film, resist pattern forming method, and manufacturing method of electronic device | FUJIFILM CORPORATION (JP) | 2025-07-01 | — | — | US | disclosed |
| US-20220252985-A1 | COMPOSITION FOR FORMING UNDERLAYER FILM, RESIST PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2022-08-11 | — | — | US | disclosed |
| WO-2021106537-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD | 富士フイルム株式会社 | 2021-06-03 | — | — | WO | disclosed |
| US-10234762-B2 | Pattern-forming method | JSR CORPORATION (JP) | 2019-03-19 | — | — | US | disclosed |
| US-10025188-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-17 | — | — | US | disclosed |
| US-20170322492-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-11-09 | — | — | US | disclosed |
| US-20170003592-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-01-05 | — | — | US | disclosed |
| US-20160320705-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-9434609-B2 | Method for forming pattern, and polysiloxane composition | JSR CORPORATION (JP) | 2016-09-06 | — | — | US | disclosed |
| US-9329478-B2 | Polysiloxane composition and pattern-forming method | JSR CORPORATION (JP) | 2016-05-03 | — | — | US | disclosed |
| EP-1146092-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-10-17 | — | — | EP | disclosed |
| US-20010018129-A1 | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2001-08-30 | — | — | US | disclosed |
| EP-1127929-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-08-29 | — | — | EP | disclosed |
| EP-1122770-A2 | Silica-based insulating film and its manufacture | JSR Corporation (JP) | 2001-08-08 | — | — | EP | disclosed |
| US-20010009936-A1 | Method of manufacturing material for forming insulating film | JSR CORPORATION (JP) | 2001-07-26 | — | — | US | disclosed |
| EP-1117102-A2 | Method of manufacturing material for forming insulating film | JSR Corporation (JP) | 2001-07-18 | — | — | EP | disclosed |
| EP-1090967-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-11 | — | — | EP | disclosed |
| EP-1088868-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-04 | — | — | EP | disclosed |
| EP-1058274-A1 | Composition for film formation and material for insulating film formation | JSR Corporation (JP) | 2000-12-06 | — | — | EP | disclosed |
| EP-1045290-A2 | Composition for resist underlayer film and method for producing the same | JSR Corporation (JP) | 2000-10-18 | — | — | EP | disclosed |