SCHEMBL646601

SCHEMBL646601

CCO[Si](OCC)(OCC)O[Si](OCC)(OCC)c1ccccc1

nearest known ligand 0.32

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 1/20 0.31
NPC1 O15118 1/20 0.30
ALDH1A1 P00352 1/20 0.30
MAPK1 P28482 1/20 0.30
RAB9A P51151 1/20 0.30
TP53 P04637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL648156 0.90 LTA4H (0.34) LTA4HNPC1ALDH1A1MAPK1RAB9A
SCHEMBL29900 0.85 LTA4H (0.37) LTA4HNPC1ALDH1A1MAPK1RAB9A
SCHEMBL4855961 0.84 NPSR1 (0.32) LTA4HNPC1ALDH1A1MAPK1RAB9A
SCHEMBL28911822 0.84 LTA4H (0.31) LTA4HNPC1ALDH1A1MAPK1RAB9A
Ethane SCHEMBL28129535 0.83 LTA4H (0.35) LTA4HNPC1ALDH1A1MAPK1RAB9A
SCHEMBL10495731 0.83 LTA4H (0.35) LTA4HNPC1ALDH1A1MAPK1RAB9A
Methane SCHEMBL27804293 0.83 LTA4H (0.35) LTA4HNPC1ALDH1A1MAPK1RAB9A
Ammonia Solution, Strong SCHEMBL28965973 0.83 LTA4H (0.35) LTA4HNPC1ALDH1A1MAPK1RAB9A
Water SCHEMBL27611436 0.83 LTA4H (0.35) LTA4HNPC1ALDH1A1MAPK1RAB9A
SCHEMBL8415484 0.83 LTA4H (0.35) LTA4HNPC1ALDH1A1MAPK1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 138 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
EP-1746122-B1 METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE JSR CORP (JP) 2013-06-12 EP disclosed
US-8450045-B2 Pattern forming method JSR CORPORATION (JP) 2013-05-28 US disclosed
EP-1705207-B1 METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM JSR CORP (JP) 2012-10-24 EP disclosed
US-8283260-B2 Process for restoring dielectric properties AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-10-09 US disclosed
US-8268403-B2 Curing a coating of a siloxane compound and a carbosilane compound using ultraviolet radiation; a low relative dielectric constant, excellent chemical resistance, plasma resistance, mechanical strength JSR CORPORATION (JP) 2012-09-18 US disclosed
US-20120122036-A1 PATTERN FORMING METHOD JSR CORPORATION (JP) 2012-05-17 US disclosed
US-8173348-B2 Method of forming pattern and composition for forming of organic thin-film for use therein JSR CORPORATION (JP) 2012-05-08 US disclosed
US-8119324-B2 Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film JSR CORPORATION (JP) 2012-02-21 US disclosed
EP-1160848-B1 Composition for silica-based film formation JSR CORP (JP) 2011-10-05 EP disclosed
EP-1146092-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-17 EP disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1127929-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-08-29 EP disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1117102-A2 Method of manufacturing material for forming insulating film JSR Corporation (JP) 2001-07-18 EP disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed