SCHEMBL648156

SCHEMBL648156

CCO[Si](OCC)(O[Si](OCC)(OCC)c1ccccc1)c1ccccc1

nearest known ligand 0.34

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 1/20 0.34
ALDH1A1 P00352 3/20 0.34
TP53 P04637 2/20 0.34
NPC1 O15118 2/20 0.34
RAB9A P51151 2/20 0.34
KDM4E B2RXH2 1/20 0.34
HPGD P15428 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
ELANE P08246 1/20 0.33
MAPK1 P28482 1/20 0.33
RELA Q04206 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31
ESR1 P03372 1/20 0.31
ESR2 Q92731 1/20 0.31
TSHR P16473 2/20 0.31
L3MBTL1 Q9Y468 2/20 0.31
KCNH2 Q12809 1/20 0.31
GLA P06280 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29900 0.91 LTA4H (0.37) LTA4HALDH1A1TP53NPC1RAB9A
SCHEMBL28911822 0.90 LTA4H (0.31) LTA4HALDH1A1TP53NPC1RAB9A
SCHEMBL4855961 0.90 NPSR1 (0.32) LTA4HALDH1A1TP53NPC1RAB9A
SCHEMBL646601 0.90 LTA4H (0.31) LTA4HALDH1A1TP53NPC1RAB9A
SCHEMBL6373874 0.89 LTA4H (0.36) LTA4HALDH1A1TP53NPC1RAB9A
SCHEMBL8415484 0.88 LTA4H (0.35) LTA4HALDH1A1TP53NPC1RAB9A
SCHEMBL10495731 0.88 LTA4H (0.35) LTA4HALDH1A1TP53NPC1RAB9A
Ammonia Solution, Strong SCHEMBL28965973 0.88 LTA4H (0.35) LTA4HALDH1A1TP53NPC1RAB9A
Water SCHEMBL27611436 0.88 LTA4H (0.35) LTA4HALDH1A1TP53NPC1RAB9A
Methane SCHEMBL27804293 0.88 LTA4H (0.35) LTA4HALDH1A1TP53NPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 152 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
US-9048175-B2 Diffusion-agent composition for forming an impurity-diffusing agent layer on a semiconductor substrate TOKYO OHKA KOGYO CO., LTD. (JP) 2015-06-02 US disclosed
US-20140227865-A1 DIFFUSION-AGENT COMPOSITION, METHOD FOR FORMING IMPURITY-DIFFUSION LAYER, AND SOLAR CELL TOKYO OHKA KOGYO CO., LTD. (JP) 2014-08-14 US disclosed
EP-1746122-B1 METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE JSR CORP (JP) 2013-06-12 EP disclosed
US-8450045-B2 Pattern forming method JSR CORPORATION (JP) 2013-05-28 US disclosed
EP-1705207-B1 METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM JSR CORP (JP) 2012-10-24 EP disclosed
US-8283260-B2 Process for restoring dielectric properties AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-10-09 US disclosed
US-8268403-B2 Curing a coating of a siloxane compound and a carbosilane compound using ultraviolet radiation; a low relative dielectric constant, excellent chemical resistance, plasma resistance, mechanical strength JSR CORPORATION (JP) 2012-09-18 US disclosed
US-20120122036-A1 PATTERN FORMING METHOD JSR CORPORATION (JP) 2012-05-17 US disclosed
US-8173348-B2 Method of forming pattern and composition for forming of organic thin-film for use therein JSR CORPORATION (JP) 2012-05-08 US disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1127929-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-08-29 EP disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1117102-A2 Method of manufacturing material for forming insulating film JSR Corporation (JP) 2001-07-18 EP disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed
US-4197384-A Stabilized polycarbonate compositions GENERAL ELECTRIC COMPANY (US) 1980-04-08 US disclosed