Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GLRA3 | O75311 | 1/20 | 0.57 |
| ▸ | GLRB | P48167 | 1/20 | 0.57 |
| ▸ | RXRB | P28702 | 6/20 | 0.46 |
| ▸ | RXRA | P19793 | 5/20 | 0.46 |
| ▸ | RXRG | P48443 | 2/20 | 0.46 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.41 |
| ▸ | GABRB2 | P47870 | 1/20 | 0.41 |
| ▸ | SRD5A2 | P31213 | 1/20 | 0.41 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.39 |
| ▸ | NPC1 | O15118 | 1/20 | 0.39 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.39 |
| ▸ | PKM | P14618 | 1/20 | 0.39 |
| ▸ | RAB9A | P51151 | 1/20 | 0.39 |
| ▸ | NR5A2 | O00482 | 1/20 | 0.38 |
| ▸ | NR5A1 | Q13285 | 1/20 | 0.38 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.38 |
| ▸ | MAPT | P10636 | 2/20 | 0.38 |
| ▸ | ALOX15 | P16050 | 2/20 | 0.38 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28419884 | 0.98 | GLRA3 (0.55) | GLRA3GLRBRXRBRXRARXRG | |
| SCHEMBL16147679 | 0.88 | GLRA3 (0.55) | GLRA3GLRBRXRBRXRARXRG | |
| SCHEMBL6130117 | 0.84 | GLRA3 (0.59) | GLRA3GLRBRXRBRXRARXRG | |
| SCHEMBL5696383 | 0.82 | GLRA3 (0.63) | GLRA3GLRBGABRA1GABRB2SMN1; SMN2 | |
| SCHEMBL27417339 | 0.82 | GLRA3 (0.57) | GLRA3GLRBRXRBRXRASMN1; SMN2 | |
| SCHEMBL14825538 | 0.82 | GLRA3 (0.42) | GLRA3GLRBRXRBRXRARXRG | |
| SCHEMBL5267910 | 0.82 | GLRA3 (0.44) | GLRA3GLRBRXRBRXRARXRG | |
| SCHEMBL11606874 | 0.80 | GLRA3 (0.61) | GLRA3GLRBGABRA1GABRB2SMN1; SMN2 | |
| SCHEMBL14988234 | 0.80 | GLRA3 (0.41) | GLRA3GLRBRXRBRXRARXRG | |
| SCHEMBL501930 | 0.79 | RXRB (0.50) | GLRA3GLRBRXRBRXRARXRG |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-107056587-B | Method for synthesizing L-menthol | 福建青松股份有限公司 | 2020-06-05 | — | — | CN | claimed |
| US-6010975-A | Catalyst composition for preparing 3-pentenoic ester from butadiene | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) | 2000-01-04 | — | — | US | claimed |
| US-20230367214-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367213-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367213-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367214-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| EP-4276534-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | Shin-Etsu Chemical Co., Ltd. (JP) | 2023-11-15 | — | — | EP | disclosed |
| US-20230194986-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-22 | — | — | US | disclosed |
| US-20230194986-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-22 | — | — | US | disclosed |
| US-20230176481-A1 | FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2023-06-08 | — | — | US | disclosed |
| US-11548844-B2 | Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-01-10 | — | — | US | disclosed |
| US-9348227-B2 | Chemically amplified resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-24 | — | — | US | disclosed |
| US-20150355544-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-10 | — | — | US | disclosed |
| US-20150355544-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-10 | — | — | US | disclosed |
| US-20050014954-A1 | Pyrrole synthesis | CIBA SPECIALTY CHEMICALS CORP. | 2005-01-20 | — | — | US | disclosed |
| EP-1451179-A1 | PYRROLE SYNTHESIS | Ciba SC Holding AG (CH) | 2004-09-01 | — | — | EP | disclosed |
| WO-2003044011-A1 | PYRROLE SYNTHESIS | CIBA SPECIALTY CHEMICALS HOLDING INC. (CH) | 2003-05-30 | — | — | WO | disclosed |
| EP-1091958-A1 | SALTS OF PAROXETINE | SMITHKLINE BEECHAM PLC (GB) | 2001-04-18 | — | — | EP | disclosed |
| WO-2000001692-A1 | SALTS OF PAROXETINE | SMITHKLINE BEECHAM PLC (GB) | 2000-01-13 | — | — | WO | disclosed |
| US-6010975-A | Catalyst composition for preparing 3-pentenoic ester from butadiene | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) | 2000-01-04 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20050014954-A1 | Pyrrole synthesis | PNPO, PPOX, DHPS | GLRA3 4802/4885GLRB 4716/4885RXRB 4326/4885 |
| US-11548844-B2 | Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process | PARG, PCNA, PLK2 | GLRA3 1268/4885GLRB 434/4885RXRB 2835/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.