⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL646822 | 0.97 | — | — | |
| SCHEMBL1263825 | 0.97 | — | — | |
| SCHEMBL647009 | 0.87 | ALDH1A1 (0.32) | — | |
| SCHEMBL645728 | 0.84 | ALDH1A1 (0.32) | — | |
| SCHEMBL1263411 | 0.84 | ALDH1A1 (0.32) | — | |
| SCHEMBL6537205 | 0.82 | — | — | |
| SCHEMBL4292249 | 0.82 | — | — | |
| SCHEMBL106110 | 0.82 | — | — | |
| SCHEMBL645521 | 0.81 | — | — | |
| SCHEMBL16055208 | 0.80 | LMNA (0.36) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 164 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240231230-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2024-07-11 | — | — | US | disclosed |
| US-20240213072-A1 | LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE | NISSAN CHEMICAL CORPORATION (JP) | 2024-06-27 | — | — | US | disclosed |
| EP-4309893-A1 | LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE | Nissan Chemical Corporation (JP) | 2024-01-24 | — | — | EP | disclosed |
| EP-4310157-A1 | LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING MACHINED SEMICONDUCTOR SUBSTRATE | Nissan Chemical Corporation (JP) | 2024-01-24 | — | — | EP | disclosed |
| US-11815815-B2 | Composition for forming silicon-containing resist underlayer film removable by wet process | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-11-14 | — | — | US | disclosed |
| WO-2023112573-A1 | METHOD FOR PRODUCING CURED PRODUCT, METHOD FOR PRODUCING LAMINATE , METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND TREATMENT LIQUID | 富士フイルム株式会社 | 2023-06-22 | — | — | WO | disclosed |
| US-20230125270-A1 | RADIATION SENSITIVE COMPOSITION | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-04-27 | — | — | US | disclosed |
| US-11609499-B2 | Silicon-containing coating agent for pattern reversal | NISSAN CHEMICAL CORPORATION (JP) | 2023-03-21 | — | — | US | disclosed |
| US-11561472-B2 | Radiation sensitive composition | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-01-24 | — | — | US | disclosed |
| US-11392037-B2 | Resist underlayer film forming composition containing silicone having cyclic amino group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2022-07-19 | — | — | US | disclosed |
| EP-1331518-A2 | Radiation sensitive composition for forming an insulating film, insulating film and display device | JSR Corporation (JP) | 2003-07-30 | — | — | EP | disclosed |
| US-20030139486-A1 | Radiation sensitive refractive index changing composition and refractive index changing method | JSR CORPORATION (JP) | 2003-07-24 | — | — | US | disclosed |
| EP-1323742-A2 | Radiation sensitive refractive index changing composition and refractive index changing method | JSR Corporation (JP) | 2003-07-02 | — | — | EP | disclosed |
| US-6576393-B1 | Hydrolysate and/or a condensate of a siloxane compound; compound generating an acid by ultraviolet irradiation and/or heating; adhesion, resistance to a developing solution, decrease in film loss in oxygen ashing of the resist | JSR CORPORATION (JP) | 2003-06-10 | — | — | US | disclosed |
| US-20030064303-A1 | Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern | JSR CORPORATION (JP) | 2003-04-03 | — | — | US | disclosed |
| US-6465368-B2 | DISSOLVING POLYMER IN SOLVENT; FORMING DIELECTRIC FILMS | JSR CORPORATION (JP) | 2002-10-15 | — | — | US | disclosed |
| EP-1235104-A1 | COMPOSITION HAVING REFRACTIVE INDEX SENSITIVELY CHANGEABLE BY RADIATION AND METHOD FOR FORMING REFRACTIVE INDEX PATTERN | JSR Corporation (JP) | 2002-08-28 | — | — | EP | disclosed |
| US-6406794-B1 | POLYETHERSILOXANE COPOLYMER | JSR CORPORATION (JP) | 2002-06-18 | — | — | US | disclosed |
| US-20010051446-A1 | Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film | JSR CORPORATION (JP) | 2001-12-13 | — | — | US | disclosed |
| EP-1045290-A2 | Composition for resist underlayer film and method for producing the same | JSR Corporation (JP) | 2000-10-18 | — | — | EP | disclosed |