SCHEMBL647009

SCHEMBL647009

CCCCOC(OCCCC)C(=O)C(CC)(OCCCC)C(=O)O.[Ti]

nearest known ligand 0.32

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.32
TP53 P04637 1/20 0.30
TSHR P16473 1/20 0.30
HCAR2 Q8TDS4 1/20 0.30
ATM Q13315 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL645728 0.97 ALDH1A1 (0.32) ALDH1A1TP53TSHRHCAR2ATM
SCHEMBL1263411 0.97 ALDH1A1 (0.32) ALDH1A1TP53TSHRHCAR2ATM
SCHEMBL646825 0.87
SCHEMBL1263825 0.84
SCHEMBL646822 0.84
SCHEMBL6537204 0.83 ALDH1A1 (0.31) ALDH1A1
SCHEMBL1362706 0.83 ALDH1A1 (0.31) ALDH1A1
SCHEMBL4288604 0.83 ALDH1A1 (0.31) ALDH1A1
SCHEMBL7110002 0.83 ALDH1A1 (0.31) ALDH1A1
SCHEMBL11282151 0.81 CA2 (0.39) ALDH1A1TSHRHCAR2ATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 176 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240231230-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2024-07-11 US disclosed
US-20240213072-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE NISSAN CHEMICAL CORPORATION (JP) 2024-06-27 US disclosed
WO-2024116915-A1 ADHESIVE SHEET HAVING RELEASE SHEET 日東電工株式会社 2024-06-06 WO disclosed
EP-4309893-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE Nissan Chemical Corporation (JP) 2024-01-24 EP disclosed
EP-4310157-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING MACHINED SEMICONDUCTOR SUBSTRATE Nissan Chemical Corporation (JP) 2024-01-24 EP disclosed
US-11815815-B2 Composition for forming silicon-containing resist underlayer film removable by wet process NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-11-14 US disclosed
WO-2023112573-A1 METHOD FOR PRODUCING CURED PRODUCT, METHOD FOR PRODUCING LAMINATE , METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND TREATMENT LIQUID 富士フイルム株式会社 2023-06-22 WO disclosed
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-04-27 US disclosed
US-11609499-B2 Silicon-containing coating agent for pattern reversal NISSAN CHEMICAL CORPORATION (JP) 2023-03-21 US disclosed
US-11561472-B2 Radiation sensitive composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-01-24 US disclosed
US-6576393-B1 Hydrolysate and/or a condensate of a siloxane compound; compound generating an acid by ultraviolet irradiation and/or heating; adhesion, resistance to a developing solution, decrease in film loss in oxygen ashing of the resist JSR CORPORATION (JP) 2003-06-10 US disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
US-20030064303-A1 Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern JSR CORPORATION (JP) 2003-04-03 US disclosed
US-6465368-B2 DISSOLVING POLYMER IN SOLVENT; FORMING DIELECTRIC FILMS JSR CORPORATION (JP) 2002-10-15 US disclosed
EP-1235104-A1 COMPOSITION HAVING REFRACTIVE INDEX SENSITIVELY CHANGEABLE BY RADIATION AND METHOD FOR FORMING REFRACTIVE INDEX PATTERN JSR Corporation (JP) 2002-08-28 EP disclosed
US-6406794-B1 POLYETHERSILOXANE COPOLYMER JSR CORPORATION (JP) 2002-06-18 US disclosed
US-20010051446-A1 Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film JSR CORPORATION (JP) 2001-12-13 US disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1117102-A2 Method of manufacturing material for forming insulating film JSR Corporation (JP) 2001-07-18 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11561472-B2 Radiation sensitive composition RER1, RAD1, RAD51 ALDH1A1 2201/4885TP53 1734/4885TSHR 3691/4885
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION XRCC6, RAD50, XRCC5 ALDH1A1 1388/4885TP53 304/4885TSHR 2115/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.