SCHEMBL647028

SCHEMBL647028

COC1CCS(OS(=O)(=O)C(F)(F)F)(c2cccc3ccccc23)C1

nearest known ligand 0.31

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
HTR2A P28223 1/20 0.31
HTR2C P28335 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5357152 0.89 HTR2A (0.32) HTR2AHTR2C
SCHEMBL3158590 0.89
SCHEMBL3158377 0.89
SCHEMBL2674345 0.89
SCHEMBL645772 0.88 DRD2 (0.30)
SCHEMBL2675950 0.88
SCHEMBL2675745 0.88
SCHEMBL2675023 0.88 MAPT (0.32)
SCHEMBL5366586 0.86 DRD2 (0.31)
SCHEMBL2673277 0.85 CA1 (0.34)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2020204073-A1 COMPOSITION FOR CURED-FILM FORMATION, WAVELENGTH CONVERSION FILM, LIGHT-EMITTING DISPLAY ELEMENT, AND METHOD FOR FORMING WAVELENGTH CONVERSION FILM JSR株式会社 2020-10-08 WO disclosed
US-9126231-B2 Insulation pattern-forming method and insulation pattern-forming material JSR CORPORATION (JP) 2015-09-08 US disclosed
US-9046769-B2 Pattern-forming method, and composition for forming resist underlayer film JSR CORPORATION (JP) 2015-06-02 US disclosed
US-20140371466-A1 PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2014-12-18 US disclosed
US-8859191-B2 Pattern-forming method, and composition for forming resist underlayer film JSR CORPORATION (JP) 2014-10-14 US disclosed
US-8450045-B2 Pattern forming method JSR CORPORATION (JP) 2013-05-28 US disclosed
EP-2579304-A1 INSULATION PATTERN FORMING METHOD AND INSULATION PATTERN FORMING MATERIAL FOR DAMASCENE PROCESS JSR Corporation (JP) 2013-04-10 EP disclosed
US-20130084394-A1 INSULATION PATTERN-FORMING METHOD AND INSULATION PATTERN-FORMING MATERIAL JSR CORPORATION (JP) 2013-04-04 US disclosed
US-20120285929-A1 PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2012-11-15 US disclosed
US-20120183902-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-07-19 US disclosed
US-20010041769-A1 Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition JSR CORPORATION (JP) 2001-11-15 US disclosed
EP-1142928-A1 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds JSR Corporation (JP) 2001-10-10 EP disclosed
US-20010014427-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 2001-08-16 US disclosed
US-6242161-B1 ABSORPTION COATINGS USING COPOLYMERS JSR CORPORATION (JP) 2001-06-05 US disclosed
EP-1085379-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-03-21 EP disclosed
US-6187504-B1 PHOTOSENSITIVE BLEND CONTAINING A NAPHTHALENE SULFONIUM SULFONATE DERIVATIVE PHOTOACID GENERATOR, RESIN HAVING ALKALI INSOLUBLE GROUPS CLEAVABLE BY ACID, AN ALKALI SOLUBLE RESIN AND A SOLUBILITY CONTROL AGENT; POSITIVES, RESOLUTION JSR CORPORATION (JP) 2001-02-13 US disclosed
US-6180316-B1 SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS JSR CORPORATION (JP) 2001-01-30 US disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed
EP-0930541-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-07-21 EP disclosed
EP-0849634-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1998-06-24 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120285929-A1 PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM ADAM9, MUS81, ADAM17 HTR2A 4004/4885HTR2C 4485/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.