Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.65 |
| ▸ | TSHR | P16473 | 1/20 | 0.65 |
| ▸ | NAAA | Q02083 | 2/20 | 0.51 |
| ▸ | MAPT | P10636 | 2/20 | 0.50 |
| ▸ | TP53 | P04637 | 1/20 | 0.50 |
| ▸ | POLB | P06746 | 1/20 | 0.50 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.48 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.47 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.46 |
| ▸ | LMNA | P02545 | 1/20 | 0.46 |
| ▸ | HPGD | P15428 | 1/20 | 0.46 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.45 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.43 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.43 |
| ▸ | NPC1 | O15118 | 1/20 | 0.43 |
| ▸ | HTT | P42858 | 1/20 | 0.42 |
| ▸ | HRH3 | Q9Y5N1 | 1/20 | 0.42 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12014429 | 1.00 | ALDH1A1 (0.65) | ALDH1A1TSHRNAAAMAPTTP53 | |
| SCHEMBL12014427 | 0.87 | ALDH1A1 (0.51) | ALDH1A1TSHRNAAAMAPTTP53 | |
| SCHEMBL12550931 | 0.85 | ALDH1A1 (0.50) | ALDH1A1TSHRNAAAMAPTTP53 | |
| SCHEMBL3787288 | 0.85 | ALDH1A1 (0.52) | ALDH1A1TSHRNAAAMAPTTP53 | |
| SCHEMBL12550932 | 0.83 | ALDH1A1 (0.51) | ALDH1A1TSHRNAAATP53SMN1; SMN2 | |
| SCHEMBL7568980 | 0.80 | NAAA (0.66) | ALDH1A1TSHRNAAASMN1; SMN2KDM4E | |
| SCHEMBL258780 | 0.80 | NAAA (0.66) | ALDH1A1TSHRNAAASMN1; SMN2KDM4E | |
| SCHEMBL31069913 | 0.80 | NAAA (0.66) | ALDH1A1TSHRNAAASMN1; SMN2KDM4E | |
| SCHEMBL207015 | 0.78 | NAAA (0.64) | ALDH1A1TSHRNAAAMAPTSMN1; SMN2 | |
| SCHEMBL4570309 | 0.77 | NAAA (0.72) | ALDH1A1TSHRNAAAPOLBSMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 464 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4660703-A2 | METAL-CONTAINING FILM PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2025-12-10 | — | — | EP | disclosed |
| US-20250372377-A1 | METAL-CONTAINING FILM PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-04 | — | — | US | disclosed |
| US-12032287-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-09 | — | — | US | disclosed |
| US-11994798-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-28 | — | — | US | disclosed |
| US-11703758-B2 | Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-18 | — | — | US | disclosed |
| US-20210063873-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-03-04 | — | — | US | disclosed |
| US-20210063871-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-03-04 | — | — | US | disclosed |
| US-20170131632-A1 | ACID DIFFUSION CONTROL AGENT, RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170131632-A1 | ACID DIFFUSION CONTROL AGENT, RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-9588423-B2 | Acid diffusion control agent, radiation-sensitive resin composition, resist pattern-forming method, compound, and production method | JSR CORPORATION (JP) | 2017-03-07 | — | — | US | disclosed |
| US-20020168581-A1 | Silicon-containing polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-11-14 | — | — | US | disclosed |
| US-20020150835-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-17 | — | — | US | disclosed |
| US-20020132182-A1 | Polymers, resist materials, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-09-19 | — | — | US | disclosed |
| EP-1236745-A2 | Silicon-containing polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-09-04 | — | — | EP | disclosed |
| US-20020115807-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020115821-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020102493-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-01 | — | — | US | disclosed |
| US-20020098443-A1 | Amine compounds, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-07-25 | — | — | US | disclosed |
| US-20020061463-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-05-23 | — | — | US | disclosed |
| EP-1195390-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-04-10 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170131632-A1 | ACID DIFFUSION CONTROL AGENT, RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD | RER1, RFC4, RFC2 | ALDH1A1 2000/4885TSHR 2622/4885NAAA 492/4885 |
| US-20020098443-A1 | Amine compounds, resist compositions and patterning process | PARG, EHMT1, EHMT2 | ALDH1A1 4186/4885TSHR 3757/4885NAAA 135/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.