SCHEMBL6512122

SCHEMBL6512122

CC(C)(C)OC(=O)OC(=Cc1ccccc1)C(O)=Cc1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
AKR1C3 P42330 1/20 0.40
MEN1 O00255 1/20 0.38
KMT2A Q03164 1/20 0.38
NFKB1 P19838 1/20 0.36
NFKB2 Q00653 1/20 0.36
RELA Q04206 1/20 0.36
ABCG2 Q9UNQ0 1/20 0.36
ALDH1A1 P00352 1/20 0.36
TSHR P16473 1/20 0.36
AKR1C1 Q04828 1/20 0.35
ELANE P08246 1/20 0.35
RECQL P46063 1/20 0.35
CYP2C19 P33261 1/20 0.35
MTNR1A P48039 2/20 0.35
MTNR1B P49286 2/20 0.35
HTT P42858 1/20 0.34
EGFR P00533 1/20 0.34
AKT1 P31749 2/20 0.33
FBP1 P09467 1/20 0.33
GPR119 Q8TDV5 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4936319 0.89 AKR1C3 (0.44) AKR1C3MEN1KMT2ANFKB1NFKB2
SCHEMBL4936314 0.89 AKR1C3 (0.44) AKR1C3MEN1KMT2ANFKB1NFKB2
SCHEMBL5550086 0.83 ALDH1A1 (0.38) AKR1C3MEN1KMT2ANFKB1NFKB2
SCHEMBL8219636 0.82 AKR1C3 (0.43) AKR1C3MEN1KMT2ANFKB1NFKB2
SCHEMBL7615069 0.78 AKR1C3 (0.50) AKR1C3MEN1KMT2ANFKB1NFKB2
SCHEMBL1905155 0.78 MEN1 (0.47) AKR1C3MEN1KMT2ANFKB1NFKB2
SCHEMBL6510500 0.78 KMT2A (0.42) AKR1C3MEN1KMT2ANFKB1NFKB2
SCHEMBL1546501 0.76 AKR1C3 (0.44) AKR1C3MEN1KMT2ANFKB1NFKB2
SCHEMBL8775676 0.76 EGFR (0.49) MEN1KMT2AALDH1A1TSHRRECQL
SCHEMBL28251565 0.75 AKR1C3 (0.43) AKR1C3MEN1KMT2ANFKB1NFKB2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6913873-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-07-05 US disclosed
US-6284438-B1 PROVIDING SEMICONDUCTOR SUBSTRATE; FORMING MATERIAL FILM TO BE PATTERNED ON SEMICONDUCTOR SUBSTRATE; FORMING A PHOTORESIST FILM ON THE MATERIAL FILM BY COATING PHOTORESIST; PATTERNING PHOTORESIST FILM REDUCING SIZE OF OPENING BY THERMAL FLOW SAMSUNG ELECTRONICS CO., LTD. (KR) 2001-09-04 US disclosed
US-5856069-A T-SHAPED PATTERN MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1999-01-05 US disclosed
US-5756262-A COATING SUBSTRATE, EXPOSURE THROUGH MASK IN PREFERENTIAL HUMIDITY SETTING, DEVELOPMENT MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1998-05-26 US disclosed