Acetonitrile

Acetonitrile

SCHEMBL65256

CC#N.COCCNCC#N

nearest known ligand 0.37

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Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 2/20 0.37
ALDH1A1 P00352 2/20 0.37
SMN1; SMN2 Q16637 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
HTT P42858 1/20 0.31
RECQL P46063 1/20 0.31
TSHR P16473 1/20 0.30
ADRB2 P07550 1/20 0.30
CA12 O43570 1/20 0.30
CA1 P00915 1/20 0.30
CA2 P00918 1/20 0.30
CA4 P22748 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3181679 0.95
Acetonitrile SCHEMBL65408 0.87 KDM4E (0.37) KDM4EALDH1A1SMN1; SMN2L3MBTL1HTT
Acetonitrile SCHEMBL65460 0.83
SCHEMBL6324283 0.77
SCHEMBL11326739 0.76
Acetonitrile SCHEMBL64131 0.76 CA12 (0.31) CA12CA1CA2CA4
SCHEMBL8950428 0.73 KDM4E (0.38) KDM4EALDH1A1L3MBTL1RECQLTSHR
Acetonitrile SCHEMBL64041 0.73 ALDH1A1 (0.38) ALDH1A1SMN1; SMN2HTTTSHR
Acetonitrile SCHEMBL4300315 0.73
SCHEMBL505679 0.73 ALDH1A1 (0.38) ALDH1A1CA12CA1CA2CA4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 423 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6743564-B2 A POSITIVE RESIST FORMULATION CONSISTS OF NITRILE CONTAINING TERT-AMINE COMPOUND, AN ORGANIC SOLVENT AND A BASE RESIN HAVING AN ACIDIC FUNCTIONAL GROUP WHICH IS PROTECTED WITH AN ACID LABILE GROUP, A PHOTOACID GENERATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-06-01 US claimed
US-12032287-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-09 US disclosed
US-11994798-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-05-28 US disclosed
US-20210063871-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
US-20210063873-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
EP-1566693-B1 Use of a Resist Composition for Immersion Exposure and Pattern Formation Method Using the Composition FUJIFILM CORP (JP) 2018-05-23 EP disclosed
EP-1276012-B1 Resist patterning process SHINETSU CHEMICAL CO (JP) 2016-03-23 EP disclosed
EP-1698937-B1 Positive resist composition and pattern-forming method using the same FUJIFILM CORP (JP) 2015-12-23 EP disclosed
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2105794-B1 Novel photoacid generator, resist composition, and patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
US-20020197559-A1 Polymers, resist compositions and patterning process, novel tetrahydrofuran compounds and their preparation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-12-26 US disclosed
US-20020168581-A1 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-11-14 US disclosed
US-20020150835-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-10-17 US disclosed
EP-1236745-A2 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-04 EP disclosed
US-20020115807-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020115018-A1 Amine compounds, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020115821-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020102493-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-01 US disclosed
US-20020061463-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-23 US disclosed
EP-1195390-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-10 EP disclosed