Acetonitrile

Acetonitrile

SCHEMBL65460

CC#N.COCOCCNCC#N

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6324283 0.96
Acetonitrile SCHEMBL64870 0.90 KDM4E (0.33)
Acetonitrile SCHEMBL65256 0.83 KDM4E (0.37)
SCHEMBL3181679 0.78
SCHEMBL5932557 0.78 KDM4E (0.38)
SCHEMBL15114169 0.72
Acetonitrile SCHEMBL65408 0.71 KDM4E (0.37)
SCHEMBL16644653 0.69 TSHR (0.41)
Acetonitrile SCHEMBL64131 0.69 CA12 (0.31)
SCHEMBL14780672 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 148 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6743564-B2 A POSITIVE RESIST FORMULATION CONSISTS OF NITRILE CONTAINING TERT-AMINE COMPOUND, AN ORGANIC SOLVENT AND A BASE RESIN HAVING AN ACIDIC FUNCTIONAL GROUP WHICH IS PROTECTED WITH AN ACID LABILE GROUP, A PHOTOACID GENERATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-06-01 US claimed
US-12032287-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-09 US disclosed
US-11994798-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-05-28 US disclosed
US-20210063873-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
US-20210063871-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
EP-1580598-B1 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORP (JP) 2016-10-12 EP disclosed
EP-1698937-B1 Positive resist composition and pattern-forming method using the same FUJIFILM CORP (JP) 2015-12-23 EP disclosed
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2244126-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
US-9034661-B2 Method for producing molecule immobilizing substrate, and molecule immobilizing substrate SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-19 US disclosed
US-20030219678-A1 Novel esters, polymers, resist compositions and patterning process MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-11-27 US disclosed
US-20030215738-A1 Photoacid generators, chemically amplified resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-11-20 US disclosed
US-20030215740-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-11-20 US disclosed
US-20030215739-A1 Polymers, resist compositions and patterning process MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-11-20 US disclosed
US-20030207201-A1 Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-11-06 US disclosed
US-20030194645-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-10-16 US disclosed
US-20030194644-A1 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-10-16 US disclosed
US-6605678-B2 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-08-12 US disclosed
US-20020115018-A1 Amine compounds, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020115821-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed