Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 5/20 | 0.37 |
| ▸ | RECQL | P46063 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 7/20 | 0.36 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.36 |
| ▸ | PKM | P14618 | 1/20 | 0.35 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.34 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.34 |
| ▸ | MEN1 | O00255 | 3/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.33 |
| ▸ | HTT | P42858 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | CTSK | P43235 | 2/20 | 0.31 |
| ▸ | ATM | Q13315 | 1/20 | 0.31 |
| ▸ | MITF | O75030 | 1/20 | 0.30 |
| ▸ | LMNA | P02545 | 1/20 | 0.30 |
| ▸ | HPGD | P15428 | 1/20 | 0.30 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.30 |
| ▸ | MDM2 | Q00987 | 1/20 | 0.30 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Acetonitrile SCHEMBL65256 | 0.87 | KDM4E (0.37) | KDM4ERECQLALDH1A1ADRB2L3MBTL1 | |
| SCHEMBL11119 | 0.85 | — | — | |
| SCHEMBL11326739 | 0.82 | — | — | |
| Fluoride SCHEMBL25246136 | 0.82 | KDM4E (0.42) | KDM4ERECQLALDH1A1ADRB2PKM | |
| Iodide SCHEMBL1835511 | 0.82 | KDM4E (0.42) | KDM4ERECQLALDH1A1ADRB2PKM | |
| Bromide SCHEMBL2534872 | 0.82 | KDM4E (0.42) | KDM4ERECQLALDH1A1ADRB2PKM | |
| SCHEMBL3631301 | 0.82 | KDM4E (0.42) | KDM4ERECQLALDH1A1ADRB2PKM | |
| Hydrochloric Acid SCHEMBL2532416 | 0.82 | L3MBTL1 (0.43) | KDM4ERECQLALDH1A1ADRB2PKM | |
| SCHEMBL7790112 | 0.82 | KDM4E (0.42) | KDM4ERECQLALDH1A1ADRB2PKM | |
| Hydrogen Sulfide SCHEMBL3631297 | 0.82 | KDM4E (0.42) | KDM4ERECQLALDH1A1ADRB2PKM |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 422 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6743564-B2 | A POSITIVE RESIST FORMULATION CONSISTS OF NITRILE CONTAINING TERT-AMINE COMPOUND, AN ORGANIC SOLVENT AND A BASE RESIN HAVING AN ACIDIC FUNCTIONAL GROUP WHICH IS PROTECTED WITH AN ACID LABILE GROUP, A PHOTOACID GENERATOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-06-01 | — | — | US | claimed |
| EP-4660703-A2 | METAL-CONTAINING FILM PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2025-12-10 | — | — | EP | disclosed |
| US-12032287-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-09 | — | — | US | disclosed |
| US-11994798-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-28 | — | — | US | disclosed |
| US-20210063873-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-03-04 | — | — | US | disclosed |
| US-20210063871-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-03-04 | — | — | US | disclosed |
| EP-1566693-B1 | Use of a Resist Composition for Immersion Exposure and Pattern Formation Method Using the Composition | FUJIFILM CORP (JP) | 2018-05-23 | — | — | EP | disclosed |
| EP-1698937-B1 | Positive resist composition and pattern-forming method using the same | FUJIFILM CORP (JP) | 2015-12-23 | — | — | EP | disclosed |
| EP-2244124-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-26 | — | — | EP | disclosed |
| EP-2105794-B1 | Novel photoacid generator, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| US-20020168581-A1 | Silicon-containing polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-11-14 | — | — | US | disclosed |
| US-20020150835-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-17 | — | — | US | disclosed |
| US-20020132182-A1 | Polymers, resist materials, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-09-19 | — | — | US | disclosed |
| EP-1236745-A2 | Silicon-containing polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-09-04 | — | — | EP | disclosed |
| US-20020115807-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020115018-A1 | Amine compounds, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020115821-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020102493-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-01 | — | — | US | disclosed |
| US-20020061463-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-05-23 | — | — | US | disclosed |
| EP-1195390-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-04-10 | — | — | EP | disclosed |