SCHEMBL6536649

SCHEMBL6536649

Oc1ccc(CCC(CCc2ccc(O)cc2)(c2ccc(O)cc2)c2ccc(O)cc2)cc1

nearest known ligand 0.59

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 12/20 0.59
ESR2 Q92731 9/20 0.59
KMT2A Q03164 2/20 0.50
MEN1 O00255 1/20 0.50
CA2 P00918 1/20 0.50
KDM4E B2RXH2 2/20 0.48
ALDH1A1 P00352 2/20 0.48
ADRA2A P08913 2/20 0.48
SLC6A2 P23975 2/20 0.48
HTR1A P08908 1/20 0.48
CYP2C19 P33261 1/20 0.48
HTR3A P46098 1/20 0.48
BACE1 P56817 1/20 0.48
TAAR1 Q96RJ0 1/20 0.48
L3MBTL1 Q9Y468 1/20 0.48
BLM P54132 1/20 0.46
TDP1 Q9NUW8 1/20 0.46
LTA4H P09960 1/20 0.46
IGF1R P08069 1/20 0.45
ALOX15 P16050 1/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9415525 0.92 ESR1 (0.52) ESR1ESR2KMT2AMEN1CA2
SCHEMBL8994577 0.83 ESR1 (0.62) ESR1ESR2IGF1RALOX15
SCHEMBL8735323 0.82 ESR1 (0.56) ESR1ESR2KMT2AMEN1CA2
SCHEMBL219016 0.78 ESR1 (0.56) ESR1ESR2KMT2AMEN1CA2
SCHEMBL18481 0.78 ESR1 (0.64) ESR1ESR2KMT2AMEN1CA2
SCHEMBL14430263 0.78 ESR1 (0.50) ESR1ESR2KMT2AMEN1
SCHEMBL6842047 0.76 ESR1 (0.61) ESR1ESR2KMT2AMEN1SLC6A2
SCHEMBL2600042 0.74 ESR1 (0.60) ESR1ESR2KMT2AMEN1CA2
SCHEMBL16114597 0.74 ESR1 (0.59) ESR1ESR2KMT2AMEN1CA2
SCHEMBL2332824 0.74 ESR1 (0.59) ESR1ESR2KMT2AMEN1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 125 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5650262-A High-resolution negative photoresist with wide process latitude OLIN MICROELECTRONIC CHEMICALS, INC. 1997-07-22 US claimed
EP-0599779-A1 High-resolution negative photoresist having extended processing latitude OCG Microelectronic Materials AG (CH) 1994-06-01 EP claimed
US-20250376552-A1 RESIN COMPOSITION, CURED SUBSTANCE, LAMINATE, MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORP (JP) 2025-12-11 US disclosed
US-20250264801-A1 RESIN COMPOSITION, CURED SUBSTANCE, LAMINATE, MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2025-08-21 US disclosed
EP-4597225-A1 FILM PRODUCTION METHOD, PHOTOSENSITIVE RESIN COMPOSITION, CURED PRODUCT PRODUCTION METHOD, CURED PRODUCT, AND LAMINATE FUJIFILM Corporation (JP) 2025-08-06 EP disclosed
EP-4596608-A1 RESIN COMPOSITION, CURED PRODUCT, LAMINATE, METHOD FOR PRODUCING CURED PRODUCT, METHOD FOR PRODUCING LAMINATE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM Corporation (JP) 2025-08-06 EP disclosed
EP-4596607-A1 RESIN COMPOSITION, CURED OBJECT, LAYERED PRODUCT, METHOD FOR PRODUCING CURED OBJECT, METHOD FOR PRODUCING LAYERED PRODUCT, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM Corporation (JP) 2025-08-06 EP disclosed
US-20250236697-A1 RESIN COMPOSITION, CURED SUBSTANCE, LAMINATE, MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2025-07-24 US disclosed
US-20250230283-A1 RESIN COMPOSITION, CURED SUBSTANCE, LAMINATE, MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2025-07-17 US disclosed
WO-2024185652-A1 RESIN COMPOSITION, CURED PRODUCT, MULTILAYER BODY, METHOD FOR PRODUCING CURED PRODUCT, METHOD FOR PRODUCING MULTILAYER BODY, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 富士フイルム株式会社 2024-09-12 WO disclosed
WO-2024150700-A1 RESIN COMPOSITION, CURED ARTICLE, MULTILAYER BODY, METHOD FOR PRODUCING CURED ARTICLE, METHOD FOR PRODUCING MULTILAYER BODY, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND RESIN 富士フイルム株式会社 2024-07-18 WO disclosed
US-5494785-A High ortho-ortho bonded novolak binder resins and their use in a process for forming positive resist patterns OCG MICROELECTRONIC MATERIALS, INC. (US) 1996-02-27 US disclosed
US-5473045-A Two-step process; first noncatalyzed reaction of phenolic monomer with aldehyde source, then chain extension OCG MICROELECTRONIC MATERIALS, INC. (US) 1995-12-05 US disclosed
US-5436098-A Multilayer element with quinone diazide, resin and aromatic hydroxy compound for relief images CIBA-GEIGY CORPORATION (US) 1995-07-25 US disclosed
US-5413894-A Positive-working photoresists also containing o-quinonediazide photosensitizers OCG MICROELECTRONIC MATERIALS, INC. (US) 1995-05-09 US disclosed
EP-0623633-A2 High ortho-ortho bonded novolak binder resins and their use in radiation-sensitive compositions OCG MICROELECTRONIC MATERIALS, INC. (US) 1994-11-09 EP disclosed
US-5312720-A Development of photosensitive images exposed photoresists OCG MICROELECTRONIC MATERIALS INC. (US) 1994-05-17 US disclosed
US-5296330-A Resolution, amorphous CIBA-GEIGY CORP. (US) 1994-03-22 US disclosed
US-5278021-A Photoactive compound OCG MICROELECTRONIC MATERIALS, INC. (US) 1994-01-11 US disclosed
EP-0530148-A1 Positive photo resist with increased dissolving power and reduced crystallisation tendency as well as new tetra(hydroxyphenyl)alkane OCG Microelectronic Materials Inc. (US) 1993-03-03 EP disclosed