Ammonia Solution, Strong

Ammonia Solution, Strong

SCHEMBL6537012

COC(=O)/C(C)=C(/C)C(=O)OC.N

nearest known ligand 0.53

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.53
MGAM O43451 1/20 0.38
GAA P10253 1/20 0.38
SI P14410 1/20 0.38
MGAM2 Q2M2H8 1/20 0.38
TET2 Q6N021 1/20 0.36
EGLN1 Q9GZT9 1/20 0.36
TSHR P16473 5/20 0.35
KEAP1 Q14145 1/20 0.35
NFE2L2 Q16236 1/20 0.35
HCAR2 Q8TDS4 1/20 0.35
KDM4E B2RXH2 1/20 0.33
CA2 P00918 1/20 0.33
PTGS1 P23219 1/20 0.33
MMP12 P39900 1/20 0.33
LMNA P02545 1/20 0.33
HSD17B10 Q99714 1/20 0.32
NFKB1 P19838 1/20 0.32
MAPT P10636 1/20 0.31
THPO P40225 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ammonia Solution, Strong SCHEMBL7633955 1.00 ALDH1A1 (0.53) ALDH1A1MGAMGAASIMGAM2
SCHEMBL305583 0.96 ALDH1A1 (0.56) ALDH1A1MGAMGAASIMGAM2
SCHEMBL305582 0.96 ALDH1A1 (0.56) ALDH1A1MGAMGAASIMGAM2
SCHEMBL11147178 0.96 ALDH1A1 (0.56) ALDH1A1MGAMGAASIMGAM2
Ammonia Solution, Strong SCHEMBL284736 0.87 ALDH1A1 (0.48) ALDH1A1MGAMGAASIMGAM2
SCHEMBL12172504 0.84 ALDH1A1 (0.46) ALDH1A1MGAMGAASIMGAM2
SCHEMBL7771273 0.84 ALDH1A1 (0.46) ALDH1A1MGAMGAASIMGAM2
SCHEMBL5843191 0.84 ALDH1A1 (0.46) ALDH1A1MGAMGAASIMGAM2
SCHEMBL5843201 0.84 ALDH1A1 (0.46) ALDH1A1MGAMGAASIMGAM2
Hydrochloric Acid SCHEMBL10871623 0.84 ALDH1A1 (0.46) ALDH1A1MGAMGAASIMGAM2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-102324327-A Method for preventing short-circuit failure of high-voltage aluminum-electrolyzing capacitor for switching power supply ZHAOQING BERYL ELECTRONIC CO LTD 2012-01-18 CN claimed
CN-102280257-A Method for enhancing high/low temperature resistance of aluminium electrolytic capacitors 2011-12-14 CN claimed
US-6462005-B1 AQUEOUS SOLUTION CONTAINING A QUARTERNARY AMMONIUM SALT, A FLUORO COMPOUND AND OPTIONALLY AN ORGANIC SOLVENT; PROTECTING DEPOSITION FILM TO BE REMOVED; NO CORROSION OF CONDUCTIVE LAYER BEING DECONTAMINATED TEXAS INSTRUMENTS INCORPORATED 2002-10-08 US claimed
CN-111856882-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-11-29 CN disclosed
CN-118620392-A Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-09-10 CN disclosed
CN-116804825-A Composition for forming silicon-containing metal hard mask and pattern forming method 信越化学工业株式会社 2023-09-26 CN disclosed
CN-111208710-B Iodine-containing thermosetting silicon-containing material, resist underlayer film forming composition for extreme ultraviolet lithography containing the same, and pattern forming method 信越化学工业株式会社 2023-08-22 CN disclosed
CN-111458980-B Composition for forming underlayer film of silicon-containing resist and method for forming pattern 信越化学工业株式会社 2023-08-11 CN disclosed
CN-104755514-B Solidification compound comprising fluorine-containing hyper branched polymer and siloxane oligomer 日产化学工业株式会社 2017-04-05 CN disclosed
CN-102324327-A Method for preventing short-circuit failure of high-voltage aluminum-electrolyzing capacitor for switching power supply ZHAOQING BERYL ELECTRONIC CO LTD 2012-01-18 CN disclosed
CN-102280257-A Method for enhancing high/low temperature resistance of aluminium electrolytic capacitors 2011-12-14 CN disclosed
CN-102280257-A Method for enhancing high/low temperature resistance of aluminium electrolytic capacitors 2011-12-14 CN disclosed
US-20040198882-A1 Silica-containing coating composition for forming films and method for forming silica-containing films FUJI PHOTO FILM CO., LTD. 2004-10-07 US disclosed
US-6462005-B1 AQUEOUS SOLUTION CONTAINING A QUARTERNARY AMMONIUM SALT, A FLUORO COMPOUND AND OPTIONALLY AN ORGANIC SOLVENT; PROTECTING DEPOSITION FILM TO BE REMOVED; NO CORROSION OF CONDUCTIVE LAYER BEING DECONTAMINATED TEXAS INSTRUMENTS INCORPORATED 2002-10-08 US disclosed