Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.53 |
| ▸ | MGAM | O43451 | 1/20 | 0.38 |
| ▸ | GAA | P10253 | 1/20 | 0.38 |
| ▸ | SI | P14410 | 1/20 | 0.38 |
| ▸ | MGAM2 | Q2M2H8 | 1/20 | 0.38 |
| ▸ | TET2 | Q6N021 | 1/20 | 0.36 |
| ▸ | EGLN1 | Q9GZT9 | 1/20 | 0.36 |
| ▸ | TSHR | P16473 | 5/20 | 0.35 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.35 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.35 |
| ▸ | HCAR2 | Q8TDS4 | 1/20 | 0.35 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.33 |
| ▸ | CA2 | P00918 | 1/20 | 0.33 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.33 |
| ▸ | MMP12 | P39900 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.32 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.32 |
| ▸ | MAPT | P10636 | 1/20 | 0.31 |
| ▸ | THPO | P40225 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ammonia Solution, Strong SCHEMBL6537012 | 1.00 | ALDH1A1 (0.53) | ALDH1A1MGAMGAASIMGAM2 | |
| SCHEMBL305583 | 0.96 | ALDH1A1 (0.56) | ALDH1A1MGAMGAASIMGAM2 | |
| SCHEMBL305582 | 0.96 | ALDH1A1 (0.56) | ALDH1A1MGAMGAASIMGAM2 | |
| SCHEMBL11147178 | 0.96 | ALDH1A1 (0.56) | ALDH1A1MGAMGAASIMGAM2 | |
| Ammonia Solution, Strong SCHEMBL284736 | 0.87 | ALDH1A1 (0.48) | ALDH1A1MGAMGAASIMGAM2 | |
| SCHEMBL12172504 | 0.84 | ALDH1A1 (0.46) | ALDH1A1MGAMGAASIMGAM2 | |
| SCHEMBL7771273 | 0.84 | ALDH1A1 (0.46) | ALDH1A1MGAMGAASIMGAM2 | |
| SCHEMBL5843191 | 0.84 | ALDH1A1 (0.46) | ALDH1A1MGAMGAASIMGAM2 | |
| SCHEMBL5843201 | 0.84 | ALDH1A1 (0.46) | ALDH1A1MGAMGAASIMGAM2 | |
| Hydrochloric Acid SCHEMBL10871623 | 0.84 | ALDH1A1 (0.46) | ALDH1A1MGAMGAASIMGAM2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6462005-B1 | AQUEOUS SOLUTION CONTAINING A QUARTERNARY AMMONIUM SALT, A FLUORO COMPOUND AND OPTIONALLY AN ORGANIC SOLVENT; PROTECTING DEPOSITION FILM TO BE REMOVED; NO CORROSION OF CONDUCTIVE LAYER BEING DECONTAMINATED | TEXAS INSTRUMENTS INCORPORATED | 2002-10-08 | — | — | US | claimed |
| CN-112526822-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2025-02-28 | — | — | CN | disclosed |
| CN-112286000-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-12-03 | — | — | CN | disclosed |
| CN-111856882-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-11-29 | — | — | CN | disclosed |
| CN-118620392-A | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-09-10 | — | — | CN | disclosed |
| CN-114660896-B | Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound | 信越化学工业株式会社 | 2024-06-11 | — | — | CN | disclosed |
| CN-116804825-A | Composition for forming silicon-containing metal hard mask and pattern forming method | 信越化学工业株式会社 | 2023-09-26 | — | — | CN | disclosed |
| CN-111208710-B | Iodine-containing thermosetting silicon-containing material, resist underlayer film forming composition for extreme ultraviolet lithography containing the same, and pattern forming method | 信越化学工业株式会社 | 2023-08-22 | — | — | CN | disclosed |
| CN-111458980-B | Composition for forming underlayer film of silicon-containing resist and method for forming pattern | 信越化学工业株式会社 | 2023-08-11 | — | — | CN | disclosed |
| US-6462005-B1 | AQUEOUS SOLUTION CONTAINING A QUARTERNARY AMMONIUM SALT, A FLUORO COMPOUND AND OPTIONALLY AN ORGANIC SOLVENT; PROTECTING DEPOSITION FILM TO BE REMOVED; NO CORROSION OF CONDUCTIVE LAYER BEING DECONTAMINATED | TEXAS INSTRUMENTS INCORPORATED | 2002-10-08 | — | — | US | disclosed |