SCHEMBL6561311

SCHEMBL6561311

CCC(C)CCOc1ccc(-c2ccc(-c3ccc(-c4ccccc4)cc3)cc2)cc1

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CHRNB2 P17787 1/20 0.53
CHRNB4 P30926 1/20 0.53
CHRNA3 P32297 1/20 0.53
CHRNA7 P36544 1/20 0.53
CHRNA4 P43681 1/20 0.53
LSS P48449 1/20 0.51
RAB9A P51151 2/20 0.48
MAPK1 P28482 1/20 0.48
MAPT P10636 2/20 0.46
PPARG P37231 2/20 0.46
PPARA Q07869 2/20 0.46
PTGES O14684 1/20 0.46
ALOX5 P09917 1/20 0.46
LTA4H P09960 2/20 0.45
NPC1 O15118 1/20 0.44
RARB P10826 1/20 0.44
HRH3 Q9Y5N1 1/20 0.44
CYP3A4 P08684 1/20 0.44
CYP2D6 P10635 1/20 0.44
CYP19A1 P11511 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10589779 1.00 CHRNB2 (0.53) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL11583149 0.89 KCNA3 (0.52) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL24398902 0.85 LTA4H (0.49) LTA4HHRH3SIGMAR1
SCHEMBL9340658 0.83 TDP1 (0.41) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL20358289 0.82 RARB (0.54) LSSRAB9ALTA4HNPC1RARB
SCHEMBL16437754 0.82 MMP2 (0.51) MAPTHRH3MMP3
SCHEMBL16437757 0.82 MMP2 (0.51) MAPTHRH3MMP3
SCHEMBL12159345 0.81 CHRNB2 (0.48) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL12482374 0.80 MEN1 (0.50) MAPK1PPARGPPARAPTGESALOX5
SCHEMBL22692744 0.80 KCNA3 (0.56) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6806019-B2 COATING SUBSTRATES WITH PHOTORESIST MIXTURES COMPRISING NOVOLAKS, ACRYLIC ESTER COPOLYMERS AND PHOTOSENSITIZERS, THEN EXPOSING THE COATINGS AND DEVELOPING, TO FORM SEMICONDUCTORS OR FLAT PANEL DISPLAYS CLARIANT FINANCE (BVI) LIMITED (VG) 2004-10-19 US disclosed
US-20040170917-A1 Method of forming thick resist pattern AZ ELECTRONIC MATERIALS USA CORP. 2004-09-02 US disclosed
EP-1400850-A1 METHOD OF FORMING THICK RESIST PATTERN CLARIANT INTERNATIONAL LTD. (CH) 2004-03-24 EP disclosed
EP-1345081-A1 HIGH-RESOLUTION PHOTOSENSITIVE RESIN COMPOSITION USABLE WITH I-LINE AND METHOD OF FORMING PATTERN Clariant International Ltd. (CH) 2003-09-17 EP disclosed
US-6537719-B1 Both a resin and a photosensitive material, wherein a fluorescent material is incorporated CLARIANT FINANCE (BVI) LIMITED (VG) 2003-03-25 US disclosed
US-20030022093-A1 High-resolution photosensitive resin composition usable with i-line and method of forming pattern AZ ELECTRONIC MATERIALS USA CORP. 2003-01-30 US disclosed
EP-1126319-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD OF IMPROVING DRY ETCHING RESISTANCE OF PHOTOSENSITIVE RESIN COMPOSITION CLARIANT INTERNATIONAL LTD. (CH) 2001-08-22 EP disclosed
EP-1087260-A1 PHOTOSENSITIVE RESIN COMPOSITION CLARIANT INTERNATIONAL LTD. (CH) 2001-03-28 EP disclosed