SCHEMBL6562584

SCHEMBL6562584

Cc1ccc(-c2c(C)c(C)c(C)c(C)c2C)c(C)c1C

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP2 O95551 1/20 0.48
NSD2 O96028 1/20 0.48
HSP90AA1 P07900 1/20 0.48
PAX8 Q06710 1/20 0.48
POLB P06746 1/20 0.40
TSHR P16473 2/20 0.33
NPC1 O15118 1/20 0.33
ALDH1A1 P00352 1/20 0.33
CYP3A4 P08684 1/20 0.33
MAPK1 P28482 1/20 0.33
CASP3 P42574 1/20 0.33
RAB9A P51151 1/20 0.33
HBB P68871 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
SENP7 Q9BQF6 1/20 0.33
SENP6 Q9GZR1 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
ELANE P08246 1/20 0.33
CYP1A2 P05177 1/20 0.32
CYP2A6 P11509 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23854312 0.82 POLB (0.55) TDP2NSD2HSP90AA1PAX8POLB
SCHEMBL31673873 0.82 POLB (0.55) TDP2NSD2HSP90AA1PAX8POLB
SCHEMBL11376426 0.76 TDP2 (0.38) TDP2NSD2HSP90AA1PAX8ALDH1A1
SCHEMBL5494672 0.74 TSHR (0.45) TDP2NSD2HSP90AA1PAX8POLB
SCHEMBL37955 0.74 TSHR (0.45) TDP2NSD2HSP90AA1PAX8POLB
SCHEMBL29352563 0.74 TSHR (0.45) TDP2NSD2HSP90AA1PAX8POLB
SCHEMBL6690084 0.74 TDP2 (0.40) TDP2NSD2HSP90AA1PAX8POLB
SCHEMBL10602533 0.74 TDP2 (0.68) TDP2NSD2HSP90AA1PAX8POLB
SCHEMBL29522870 0.74 TDP2 (0.50) TDP2NSD2HSP90AA1PAX8POLB
SCHEMBL674648 0.72 TDP2 (0.39) TDP2NSD2HSP90AA1PAX8POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6806019-B2 COATING SUBSTRATES WITH PHOTORESIST MIXTURES COMPRISING NOVOLAKS, ACRYLIC ESTER COPOLYMERS AND PHOTOSENSITIZERS, THEN EXPOSING THE COATINGS AND DEVELOPING, TO FORM SEMICONDUCTORS OR FLAT PANEL DISPLAYS CLARIANT FINANCE (BVI) LIMITED (VG) 2004-10-19 US disclosed
US-20040170917-A1 Method of forming thick resist pattern AZ ELECTRONIC MATERIALS USA CORP. 2004-09-02 US disclosed
EP-1400850-A1 METHOD OF FORMING THICK RESIST PATTERN CLARIANT INTERNATIONAL LTD. (CH) 2004-03-24 EP disclosed
EP-1345081-A1 HIGH-RESOLUTION PHOTOSENSITIVE RESIN COMPOSITION USABLE WITH I-LINE AND METHOD OF FORMING PATTERN Clariant International Ltd. (CH) 2003-09-17 EP disclosed
US-6537719-B1 Both a resin and a photosensitive material, wherein a fluorescent material is incorporated CLARIANT FINANCE (BVI) LIMITED (VG) 2003-03-25 US disclosed
US-20030022093-A1 High-resolution photosensitive resin composition usable with i-line and method of forming pattern AZ ELECTRONIC MATERIALS USA CORP. 2003-01-30 US disclosed
EP-1126319-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD OF IMPROVING DRY ETCHING RESISTANCE OF PHOTOSENSITIVE RESIN COMPOSITION CLARIANT INTERNATIONAL LTD. (CH) 2001-08-22 EP disclosed
EP-1087260-A1 PHOTOSENSITIVE RESIN COMPOSITION CLARIANT INTERNATIONAL LTD. (CH) 2001-03-28 EP disclosed