SCHEMBL6562950

SCHEMBL6562950

C#CC(C#C)(O[SiH3])c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.39
MAPK1 P28482 1/20 0.34
KCNN4 O15554 4/20 0.33
ALDH1A1 P00352 2/20 0.33
ALOX15 P16050 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28724152 0.77 TSHR (0.39) TSHRMAPK1KCNN4ALDH1A1ALOX15
SCHEMBL29213024 0.77 CACNA2D1 (0.34)
SCHEMBL28884186 0.74 MAPK1 (0.41) TSHRMAPK1KCNN4ALDH1A1ALOX15
SCHEMBL6564084 0.72 APP (0.42) TSHRMAPK1KCNN4ALDH1A1
SCHEMBL6564327 0.68 TSHR (0.34) TSHRMAPK1KCNN4ALDH1A1
SCHEMBL28724138 0.68 LMNA (0.35) TSHRMAPK1KCNN4ALDH1A1
SCHEMBL49087 0.67 KIF11 (0.44) TSHRMAPK1KCNN4ALDH1A1ALOX15
SCHEMBL8904915 0.67 TSHR (0.48) TSHRMAPK1KCNN4ALDH1A1ALOX15
SCHEMBL7194334 0.67 TSHR (0.48) TSHRMAPK1KCNN4ALDH1A1ALOX15
SCHEMBL10804256 0.67 TSHR (0.48) TSHRMAPK1KCNN4ALDH1A1ALOX15

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115181223-A Low-gloss matte auxiliary agent, preparation method thereof and formed body 铨盛聚碳科技股份有限公司 2022-10-14 CN disclosed
EP-1122746-B1 Composition for film formation and insulating film JSR CORP (JP) 2004-09-22 EP disclosed
US-6468589-B2 A HEAT-CURED POLYETHER BASED ON A 9,9-BIS(P-HYDROXYPHENYL)-FLUORENE HAVING AT LEAST ONE ALKYL SUBSTITUENT AND A DIHYDROXY AROMATIC COMONOMER; LOW DIELECTRIC PROTECTIVE COATINGS; HEAT RESISTANCE; NONCRACKING JSR CORPORATION (JP) 2002-10-22 US disclosed
US-20010012870-A1 Composition for film formation and insulating film JSR CORPORATION (JP) 2001-08-09 US disclosed
EP-1122746-A1 Composition for film formation and insulating film JSR Corporation (JP) 2001-08-08 EP disclosed