Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | POLB | P06746 | 2/20 | 0.39 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.39 |
| ▸ | SIGMAR1 | Q99720 | 2/20 | 0.35 |
| ▸ | HTR2A | P28223 | 2/20 | 0.34 |
| ▸ | HTR6 | P50406 | 1/20 | 0.34 |
| ▸ | CYP2D6 | P10635 | 2/20 | 0.33 |
| ▸ | ATM | Q13315 | 1/20 | 0.33 |
| ▸ | P2RX4 | Q99571 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | HDAC4 | P56524 | 2/20 | 0.33 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.32 |
| ▸ | HDAC7 | Q8WUI4 | 1/20 | 0.32 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.32 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.32 |
| ▸ | HDAC9 | Q9UKV0 | 1/20 | 0.32 |
| ▸ | HDAC5 | Q9UQL6 | 1/20 | 0.32 |
| ▸ | NCOR2 | Q9Y618 | 1/20 | 0.32 |
| ▸ | RET | P07949 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 2/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30931450 | 0.87 | POLB (0.38) | POLBKDM4EALDH1A1SIGMAR1HTR2A | |
| SCHEMBL8697270 | 0.85 | POLB (0.49) | POLBKDM4EALDH1A1HTR2AHTR6 | |
| SCHEMBL27926152 | 0.85 | ALDH1A1 (0.38) | POLBKDM4EALDH1A1HTR2AHTR6 | |
| SCHEMBL89374 | 0.85 | POLB (0.49) | POLBKDM4EALDH1A1HTR2AHTR6 | |
| SCHEMBL8694188 | 0.85 | POLB (0.49) | POLBKDM4EALDH1A1HTR2AHTR6 | |
| SCHEMBL50555 | 0.84 | POLB (0.37) | POLBKDM4EALDH1A1HTR2AHTR6 | |
| SCHEMBL28304038 | 0.84 | POLB (0.47) | POLBKDM4EALDH1A1HTR2AHTR6 | |
| SCHEMBL29059172 | 0.84 | POLB (0.37) | POLBKDM4EALDH1A1HTR2AHTR6 | |
| SCHEMBL31072333 | 0.83 | KDM4E (0.35) | POLBKDM4EALDH1A1SIGMAR1HTR2A | |
| SCHEMBL31072332 | 0.83 | KDM4E (0.35) | POLBKDM4EALDH1A1SIGMAR1HTR2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114478987-A | Polyurethane, method for producing polyurethane, conductive paste composition, conductive wiring, and method for producing conductive wiring | 信越化学工业株式会社 | 2022-05-13 | — | — | CN | disclosed |
| US-20040056196-A1 | Method and apparatus for monitoring environment and apparatus for producing semiconductor | NIWANO, MICHIO (JP) | 2004-03-25 | — | — | US | disclosed |
| JP-2001019689-A | PRODUCTION OF INDENE CARBONATE | ADCHEMCO CORP | 2001-01-23 | — | — | JP | disclosed |
| JP-2001019689-A | PRODUCTION OF INDENE CARBONATE | ADCHEMCO CORP | 2001-01-23 | — | — | JP | disclosed |
| EP-0244019-B1 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, IN WHICH A NEGATIVE IMAGE IS FORMED ON A SEMICONDUCTOR SUBSTRATE IN A POSITIVE PHOTOLACQUER | Koninklijke Philips Electronics N.V. (NL) | 1991-09-11 | — | — | EP | disclosed |
| US-4937176-A | Method of manufacturing a semiconductor device, in which a negative image is formed on a semiconductor substrate in a positive photolacquer | U.S. PHILIPS CORPORATION (US) | 1990-06-26 | — | — | US | disclosed |
| EP-0192302-B1 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, IN WHICH A PHOTOLACQUER MASK IS FORMED BY MEANS OF A TWO-LAYER LACQUER SYSTEM | Koninklijke Philips Electronics N.V. (NL) | 1990-05-02 | — | — | EP | disclosed |
| EP-0244019-A1 | Method of manufacturing a semiconductor device, in which a negative image is formed on a semiconductor substrate in a positive photolacquer | Koninklijke Philips Electronics N.V. (NL) | 1987-11-04 | — | — | EP | disclosed |
| US-4704347-A | Method of manufacturing a semiconductor device, in which a photolacquer mask is formed by means of a two-layer lacquer system. | U.S. PHILIPS CORPORATION (US) | 1987-11-03 | — | — | US | disclosed |
| EP-0192302-A1 | Method of manufacturing a semiconductor device, in which a photolacquer mask is formed by means of a two-layer lacquer system | Koninklijke Philips Electronics N.V. (NL) | 1986-08-27 | — | — | EP | disclosed |