SCHEMBL6701612

SCHEMBL6701612

C=C(C)C(=O)OC1(C)CC(=O)OC1C

nearest known ligand 0.33

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22840995 1.00 ALDH1A1 (0.33) ALDH1A1
SCHEMBL9880100 0.86 ALDH1A1 (0.33) ALDH1A1
Methacrylic Acid SCHEMBL18424701 0.83
SCHEMBL22877558 0.79 ALDH1A1 (0.34) ALDH1A1
SCHEMBL22877669 0.79 ALDH1A1 (0.34) ALDH1A1
SCHEMBL22877371 0.79 ALDH1A1 (0.34) ALDH1A1
SCHEMBL15946503 0.78 ALDH1A1 (0.30) ALDH1A1
SCHEMBL15946493 0.78 ALDH1A1 (0.33) ALDH1A1
SCHEMBL23058296 0.76 PPARG (0.30)
SCHEMBL22877660 0.76 SMN1; SMN2 (0.32) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 139 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12032290-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-12032290-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-11835849-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-12-05 US disclosed
US-11835849-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-12-05 US disclosed
US-20230375925-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN FUJIFILM CORPORATION (JP) 2023-11-23 US disclosed
US-20230375925-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN FUJIFILM CORPORATION (JP) 2023-11-23 US disclosed
US-20230367210-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-11-16 US disclosed
US-20230367210-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-11-16 US disclosed
US-11697754-B2 Thermal conductive layer, photosensitive layer, photosensitive composition, manufacturing method for thermal conductive layer, and laminate and semiconductor device FUJIFILM CORPORATION (JP) 2023-07-11 US disclosed
US-11697754-B2 Thermal conductive layer, photosensitive layer, photosensitive composition, manufacturing method for thermal conductive layer, and laminate and semiconductor device FUJIFILM CORPORATION (JP) 2023-07-11 US disclosed
US-20140045123-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-13 US disclosed
US-20040248031-A1 5-Methylene-1,3-dioxolan-4-one derivatives, process for their production, polymers of the derivatives, resist compositions, and pattern formation process MITSUBISHI CHEMICAL CORPORATION (JP) 2004-12-09 US disclosed
US-6806335-B2 FOR USE IN FINE PATTERNING OF SEMICONDUCTORS DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2004-10-19 US disclosed
US-6692889-B1 COPOLYMERS CONTAINING DERIVATIZED ADAMANTANYL ACRYLATE FUNCTIONALITY; ETCHING RESISTANCE DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2004-02-17 US disclosed
US-20040006189-A1 Polymeric compound and resin composition for photoresist DAICEL CHEMICAL INDUSTRIES, LTD. 2004-01-08 US disclosed
US-6552143-B2 Addition polymer including units of 1-oxo-perhydro-5,6-didehydro-4,7-methanoisobenzofuran; making a semiconductor using the photoresist; high adhesion, fine patterns DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2003-04-22 US disclosed
US-20020169266-A1 Polymeric compound and resin composition for photoresist DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2002-11-14 US disclosed
US-6440636-B1 HIGH ETCHING RESISTANCE, TRANSPARENCY, ALKALI SOLUBILITY, AND ADHESION; ACRYLIC ESTERS HAVING ADAMANTANE GROUP KABUSHIKI KAISHA TOSHIBA (JP) 2002-08-27 US disclosed
EP-1172384-A1 POLYMER FOR PHOTORESISTS AND RESIN COMPOSITIONS FOR PHOTORESISTS Daicel Chemical Industries, Ltd. (JP) 2002-01-16 EP disclosed
EP-1172694-A1 POLYMERIC COMPOUND FOR PHOTORESIST AND RESIN COMPOSITION FOR PHOTORESIST Daicel Chemical Industries, Ltd. (JP) 2002-01-16 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11835849-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, TERB1, TRRAP ALDH1A1 2433/4885
US-20140045123-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS MMAB, PARG, DNMT3A ALDH1A1 1004/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.