SCHEMBL6721159

SCHEMBL6721159

CCC(C)c1cc(OC)c(O)c(OC)c1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.45
LMNA P02545 2/20 0.45
MAPT P10636 2/20 0.45
TP53 P04637 1/20 0.45
ALOX12 P18054 1/20 0.45
PKM P14618 3/20 0.44
CA12 O43570 1/20 0.44
CA1 P00915 1/20 0.44
CA2 P00918 1/20 0.44
CA3 P07451 1/20 0.44
CA4 P22748 1/20 0.44
CA6 P23280 1/20 0.44
CA5A P35218 1/20 0.44
CA7 P43166 1/20 0.44
CA9 Q16790 1/20 0.44
CA14 Q9ULX7 1/20 0.44
CA5B Q9Y2D0 1/20 0.44
GAA P10253 3/20 0.44
KMT2A Q03164 2/20 0.44
KDM4E B2RXH2 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14665252 0.89 ALDH1A1 (0.41) ALDH1A1LMNAMAPTTP53ALOX12
SCHEMBL26857708 0.87 APP (0.42) ALDH1A1LMNAMAPTTP53ALOX12
SCHEMBL2740734 0.86 PDE4A (0.42) ALDH1A1LMNAMAPTTP53ALOX12
SCHEMBL10110894 0.81 PTGS2 (0.54) ALDH1A1LMNAMAPTTP53ALOX12
SCHEMBL20373607 0.81 ALDH1A1 (0.43) ALDH1A1LMNAMAPTTP53ALOX12
SCHEMBL2618698 0.81 PTGS2 (0.54) ALDH1A1LMNAMAPTTP53ALOX12
SCHEMBL4098658 0.81 PTGS2 (0.54) ALDH1A1LMNAMAPTTP53ALOX12
SCHEMBL6243516 0.80 PKM (0.48) ALDH1A1LMNAMAPTPKMCA12
SCHEMBL28405780 0.80 TNKS2 (0.47) ALDH1A1LMNAMAPTPKMCA12
SCHEMBL15241060 0.79 CYP3A4 (0.49) LMNAMAPTPKMCA12CA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8198007-B2 Negative-working resist composition and pattern forming method using the same DAI NIPPON PRINTING CO., LTD. (JP) 2012-06-12 US disclosed
US-8182975-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-05-22 US disclosed
US-8124310-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-02-28 US disclosed
US-8092976-B2 High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-7989137-B2 Resist composition and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2011-08-02 US disclosed
US-7887988-B2 Acid generator; irradiating with actinic radiation FUJIFILM CORPORATION (JP) 2011-02-15 US disclosed
US-7887988-B2 Acid generator; irradiating with actinic radiation FUJIFILM CORPORATION (JP) 2011-02-15 US disclosed
US-20100239980-A1 NEGATIVE-WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME DAI NIPPON PRINTING CO., LTD. (JP) 2010-09-23 US disclosed
US-7799506-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2010-09-21 US disclosed
US-7794916-B2 Positive photosensitive composition, polymer compound used for the positive photosensitive composition, production method of the polymer compound, and pattern forming method using the positive photosensitive composition FUJIFILM CORPORATION (JP) 2010-09-14 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080081289-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080076062-A1 RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed
US-20080050675-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-02-28 US disclosed
US-20080050675-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-02-28 US disclosed
US-20070218406-A1 Acid generator; exposure to actinic radiation FUJIFILM CORPORATION (JP) 2007-09-20 US disclosed
US-20070218406-A1 Acid generator; exposure to actinic radiation FUJIFILM CORPORATION (JP) 2007-09-20 US disclosed
US-20070218407-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-09-20 US disclosed
US-20070218407-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-09-20 US disclosed
US-7157208-B2 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-01-02 US disclosed