SCHEMBL6722003

SCHEMBL6722003

CCC(C)(C)C(=O)Oc1ccccc1C(C)=O

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ELANE P08246 2/20 0.54
LMNA P02545 6/20 0.49
KDM4E B2RXH2 5/20 0.49
ALDH1A1 P00352 3/20 0.49
SMN1; SMN2 Q16637 2/20 0.49
KMT2A Q03164 4/20 0.48
MAPT P10636 5/20 0.46
L3MBTL1 Q9Y468 2/20 0.46
HSD17B10 Q99714 2/20 0.45
ESR1 P03372 1/20 0.45
ITGB3 P05106 1/20 0.45
ITGA2B P08514 1/20 0.45
HMGB1 P09429 1/20 0.45
HPGD P15428 1/20 0.45
TSHR P16473 1/20 0.45
GGT1 P19440 1/20 0.45
PTGS1 P23219 1/20 0.45
PTGS2 P35354 1/20 0.45
BLM P54132 1/20 0.45
NAPRT Q6XQN6 1/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28213186 0.87 KDM4E (0.57) ELANELMNAKDM4EALDH1A1KMT2A
SCHEMBL17480103 0.86 ELANE (0.43) ELANELMNAKDM4EALDH1A1SMN1; SMN2
SCHEMBL28026665 0.84 ELANE (0.48) ELANELMNAKDM4EKMT2AMAPT
SCHEMBL825357 0.83 ELANE (0.73) ELANEKDM4EALDH1A1MAPTHSD17B10
SCHEMBL825371 0.82 HSD17B10 (0.51) ELANELMNAKDM4EALDH1A1KMT2A
SCHEMBL28026655 0.81 ALDH1A1 (0.59) ELANELMNAALDH1A1L3MBTL1HSD17B10
SCHEMBL16775526 0.80 ELANE (0.43) ELANELMNAKDM4EALDH1A1KMT2A
SCHEMBL16775527 0.80 CA12 (0.39) ELANEKDM4EALDH1A1KMT2AMAPT
SCHEMBL15495725 0.80 ELANE (0.45) ELANEKDM4EALDH1A1L3MBTL1TDP1
SCHEMBL16672587 0.80 POLB (0.46) ELANELMNAALDH1A1SMN1; SMN2KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9612535-B2 Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-04-04 US disclosed
US-9519213-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-13 US disclosed
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 US disclosed
US-9459531-B2 2016-10-04 US disclosed
US-9323150-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-26 US disclosed
US-20150370170-A1 PATTERN FORMING METHOD, ELECTRON BEAM- OR EXTREME ULTRAVIOLET-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-12-24 US disclosed
US-20150293446-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-15 US disclosed
US-20150284492-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-08 US disclosed
US-20140272692-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN FUJIFILM CORPORATION (JP) 2014-09-18 US disclosed
US-20140255843-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-11 US disclosed
US-20140227636-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-08-14 US disclosed
US-8182975-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-05-22 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed