SCHEMBL825371

SCHEMBL825371

CCC(C)(C)C(=O)Oc1ccccc1C(=O)Oc1ccccc1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HSD17B10 Q99714 4/20 0.51
MAPT P10636 3/20 0.51
ALDH1A1 P00352 3/20 0.51
NPSR1 Q6W5P4 2/20 0.51
KMT2A Q03164 2/20 0.51
TSHR P16473 1/20 0.51
CYP1A2 P05177 2/20 0.50
CYP2C9 P11712 2/20 0.50
CYP2C19 P33261 1/20 0.50
ELANE P08246 3/20 0.49
LMNA P02545 2/20 0.48
PTGS2 P35354 1/20 0.48
HPGD P15428 3/20 0.47
ALOX15 P16050 1/20 0.47
KDM4E B2RXH2 3/20 0.47
L3MBTL1 Q9Y468 1/20 0.46
TDP1 Q9NUW8 2/20 0.45
XBP1 P17861 1/20 0.45
SLC6A3 Q01959 1/20 0.43
ESR1 P03372 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21795728 0.85 ELANE (0.68) HSD17B10MAPTALDH1A1NPSR1KMT2A
SCHEMBL28213186 0.85 KDM4E (0.57) HSD17B10MAPTALDH1A1NPSR1KMT2A
SCHEMBL131278 0.83 ELANE (0.51) MAPTNPSR1ELANEL3MBTL1TDP1
SCHEMBL6722003 0.82 ELANE (0.54) HSD17B10MAPTALDH1A1NPSR1KMT2A
SCHEMBL28026655 0.82 ALDH1A1 (0.59) HSD17B10ALDH1A1TSHRELANELMNA
SCHEMBL28026665 0.82 ELANE (0.48) HSD17B10MAPTNPSR1KMT2ACYP1A2
SCHEMBL825357 0.81 ELANE (0.73) HSD17B10MAPTALDH1A1TSHRELANE
SCHEMBL28026649 0.80 TSHR (0.61) HSD17B10MAPTALDH1A1KMT2ATSHR
SCHEMBL825366 0.79 MAPT (0.56) MAPTALDH1A1KMT2AELANEL3MBTL1
SCHEMBL825408 0.78 MAPT (0.51) HSD17B10MAPTALDH1A1NPSR1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9612535-B2 Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-04-04 US disclosed
US-9323150-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-26 US disclosed
US-20150370170-A1 PATTERN FORMING METHOD, ELECTRON BEAM- OR EXTREME ULTRAVIOLET-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-12-24 US disclosed
US-9188862-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same FUJIFILM CORPORATION (JP) 2015-11-17 US disclosed
US-20140227636-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-08-14 US disclosed
WO-2013100158-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2013-07-04 WO disclosed
US-8182975-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-05-22 US disclosed
US-8142977-B2 mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator FUJIFILM CORPORATION (JP) 2012-03-27 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
EP-1975712-A2 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2008-10-01 EP disclosed