SCHEMBL6722085

SCHEMBL6722085

CCC(C)(C)C(=O)OC1C2CC3CC(C2)CC1C3

nearest known ligand 0.41

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 10/20 0.41
EPHX1 P07099 2/20 0.39
FKBP1A P62942 1/20 0.39
CYP2C9 P11712 1/20 0.37
EPHX2 P34913 3/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
HMGCR P04035 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17752193 0.89 HSD11B1 (0.36) HSD11B1EPHX1FKBP1ACYP2C9EPHX2
SCHEMBL11948900 0.84 HSD11B1 (0.36) HSD11B1EPHX1FKBP1ACYP2C9EPHX2
SCHEMBL13430234 0.84 HMGCR (0.36) HMGCR
SCHEMBL16200802 0.84 EPHX1 (0.32) HSD11B1EPHX1FKBP1ACYP2C9HMGCR
SCHEMBL20101400 0.83 HMGCR (0.33) FKBP1AHMGCR
SCHEMBL12365220 0.83 HMGCR (0.33) HSD11B1HMGCR
SCHEMBL19976016 0.83 HSD11B1 (0.39) HSD11B1EPHX1FKBP1ACYP2C9EPHX2
SCHEMBL13430191 0.82 HMGCR (0.37) HMGCR
SCHEMBL11948956 0.82 HSD11B1 (0.36) HSD11B1EPHX1FKBP1ACYP2C9EPHX2
SCHEMBL11948961 0.82 HSD11B1 (0.35) HSD11B1EPHX1FKBP1ACYP2C9EPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170349686-A1 PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-12-07 US disclosed
US-9835945-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2017-12-05 US disclosed
US-9698014-B2 Photoresist composition to reduce photoresist pattern collapse TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD (TW) 2017-07-04 US disclosed
US-9698014-B2 Photoresist composition to reduce photoresist pattern collapse TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD (TW) 2017-07-04 US disclosed
US-20170123318-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2017-05-04 US disclosed
US-9541831-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2017-01-10 US disclosed
US-20160320699-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-03 US disclosed
US-20160033863-A1 PHOTORESIST COMPOSITION TO REDUCE PHOTORESIST PATTERN COLLAPSE TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD (TW) 2016-02-04 US disclosed
US-20160033863-A1 PHOTORESIST COMPOSITION TO REDUCE PHOTORESIST PATTERN COLLAPSE TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD (TW) 2016-02-04 US disclosed
US-20150331314-A1 PATTERN FORMING METHOD, COMPOUND USED THEREIN, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-11-19 US disclosed
US-20100167201-A1 RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-01 US disclosed
US-20090136878-A1 TOPCOAT COMPOSITION, ALKALI DEVELOPER-SOLUBLE TOPCOAT FILM USING THE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-05-28 US disclosed
US-20090136878-A1 TOPCOAT COMPOSITION, ALKALI DEVELOPER-SOLUBLE TOPCOAT FILM USING THE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-05-28 US disclosed
US-20080305433-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2008-12-11 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20080206668-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
US-20080137206-A1 Film, Manufacturing Method Thereof, Polarization Plate Using the Film, and Liquid Crystal, and Display Device Using the Polarizing Plate FUJIFILM CORPORATION (JP) 2008-06-12 US disclosed
US-7368220-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2008-05-06 US disclosed
US-20070178405-A1 Positive resist composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-08-02 US disclosed
US-20070148589-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-06-28 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20150331314-A1 PATTERN FORMING METHOD, COMPOUND USED THEREIN, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE RER1, CROCC, RFT1 HSD11B1 4273/4885EPHX1 10/4885FKBP1A 4743/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.