SCHEMBL6728823

SCHEMBL6728823

O=C1CCCCC1S1(OS(=O)(=O)C(F)(F)F)CCCC1

nearest known ligand 0.32

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
MAPT P10636 1/20 0.32
CA1 P00915 1/20 0.30
CA2 P00918 1/20 0.30
CA4 P22748 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6728026 0.85 CA1 (0.30) CA1CA2
SCHEMBL6725965 0.84 CA2 (0.32) CA1CA2
SCHEMBL6727726 0.71 CYP2D6 (0.37) MAPT
Hydrogen Sulfide SCHEMBL3629966 0.68 MAPT (0.37) MAPTCA1CA2CA4
Methylsulfanylmethane SCHEMBL15329055 0.65 CA1 (0.36) MAPTCA1CA2CA4
SCHEMBL3146166 0.65 MAPT (0.34) MAPTCA1CA2CA4
SCHEMBL515933 0.64 MAPT (0.43) MAPTCA1CA2CA4
Hydrogen Sulfide SCHEMBL9081553 0.63 PTGS1 (0.33) MAPT
SCHEMBL642592 0.62 MAPT (0.41) MAPTCA1CA2CA4
SCHEMBL5866310 0.62 KDM4E (0.34) MAPTCA1CA2CA4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20040224251-A1 Positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-11-11 US disclosed
US-6602647-B2 Photo acid generator with high transparency and excellent heat stability in a photoresist for lithography using far ultraviolet light, especially light of ArF excimer consists of a cyclic sulfonium compound with 2-oxo group NEC CORPORATION (JP) 2003-08-05 US disclosed
US-20020045122-A1 Sulfonium salt compound and resist composition and pattern forming method using the same NEC CORPORATION 2002-04-18 US disclosed
EP-1113334-A1 Sulfonium salt compound, resist composition comprising the same and pattern forming method using the composition NEC CORPORATION (JP) 2001-07-04 EP disclosed