SCHEMBL6743527

SCHEMBL6743527

CC(C)COC(C)Oc1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.44
KDM4E B2RXH2 1/20 0.41
MAOA P21397 1/20 0.40
PTGS1 P23219 1/20 0.40
MTNR1A P48039 4/20 0.40
MTNR1B P49286 4/20 0.40
HPGD P15428 2/20 0.38
POLB P06746 1/20 0.38
MAPT P10636 1/20 0.38
XBP1 P17861 1/20 0.38
ALDH1A1 P00352 2/20 0.37
TSHR P16473 1/20 0.37
SLC6A4 P31645 1/20 0.37
GAA P10253 2/20 0.36
ADRB2 P07550 1/20 0.36
ADRB1 P08588 1/20 0.36
CYP2D6 P10635 1/20 0.36
ADRB3 P13945 1/20 0.36
CA4 P22748 1/20 0.36
CYP1A2 P05177 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ethylene SCHEMBL27839740 0.96 LMNA (0.41) LMNAKDM4EMAOAPTGS1MTNR1A
SCHEMBL997422 0.81 LMNA (0.46) LMNAKDM4EMAOAPTGS1MTNR1A
SCHEMBL4965000 0.80 SLC2A1 (0.35) POLBMAPTCYP2D6CYP1A2CYP2C9
SCHEMBL10231953 0.80 IDO1 (0.37) KDM4EPOLBALDH1A1CYP2D6CYP1A2
SCHEMBL542873 0.79 KDM4E (0.50) LMNAKDM4EMAOAPTGS1MTNR1A
SCHEMBL11609960 0.79 CA4 (0.41) LMNAKDM4EMAOAPTGS1MTNR1A
SCHEMBL11279932 0.79 KDM4E (0.41) LMNAKDM4EMAOAPTGS1MTNR1A
SCHEMBL7106151 0.79 PPARG (0.41) LMNAHPGDPOLBMAPTALDH1A1
SCHEMBL2398262 0.78 TSHR (0.43) LMNAKDM4EMAOAMTNR1AMTNR1B
SCHEMBL4191032 0.78 LTA4H (0.41) LMNAKDM4EMTNR1AMTNR1BSLC6A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8182975-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-05-22 US disclosed
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed
US-7524609-B2 Photo sensitive composition, pattern-forming method using the photosensitive composition and compound for use in the photosensitive composition FUJIFILM CORPORATION (JP) 2009-04-28 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20080081289-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080081292-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080050675-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-02-28 US disclosed
US-20070212645-A1 Photo sensitive composition, pattern-forming method using the photosensitive composition and compound for use in the photosensitive composition FUJIFILM CORPORATION (JP) 2007-09-13 US disclosed
US-7202014-B2 Stimulus-sensitive composition, compound and pattern formation method using the stimulation-sensitive composition FUJIFILM CORPORATION (JP) 2007-04-10 US disclosed