SCHEMBL6744161

SCHEMBL6744161

O=C1C2C3C=CC(C3)C2C(=O)N1OS(=O)(=O)c1ccc(F)cc1F

nearest known ligand 0.39

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
▸ HTT P42858 2/20 0.39
▸ ALDH1A1 P00352 3/20 0.38
▸ TDP1 Q9NUW8 1/20 0.38
▸ TSHR P16473 2/20 0.38
▸ POLB P06746 1/20 0.37
▸ MEN1 O00255 1/20 0.37
▸ KMT2A Q03164 1/20 0.37
▸ LMNA P02545 1/20 0.37
▸ SMN1; SMN2 Q16637 1/20 0.37
▸ CYP3A4 P08684 1/20 0.36
▸ CYP2C19 P33261 1/20 0.36
▸ NPSR1 Q6W5P4 1/20 0.36
▸ USP2 O75604 1/20 0.35
▸ AKR1B1 P15121 1/20 0.35
▸ GAA P10253 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15082167 1.00 HTT (0.39) HTTALDH1A1TDP1TSHRPOLB
SCHEMBL3189821 0.82 MEN1 (0.50) HTTALDH1A1TDP1TSHRPOLB
SCHEMBL14252042 0.80 ALDH1A1 (0.39) HTTALDH1A1TDP1TSHRMEN1
SCHEMBL14102451 0.80 ALDH1A1 (0.36) ALDH1A1TDP1TSHRPOLBMEN1
SCHEMBL547495 0.77 ALDH1A1 (0.42) HTTALDH1A1TDP1TSHRPOLB
SCHEMBL19861151 0.77 ALDH1A1 (0.42) HTTALDH1A1TDP1TSHRPOLB
SCHEMBL3870272 0.77 PARL (0.51) ALDH1A1TSHRPOLBMEN1KMT2A
SCHEMBL10231672 0.76 KMT2A (0.38) HTTALDH1A1TSHRPOLBMEN1
SCHEMBL29369448 0.75 KMT2A (0.46) ALDH1A1TDP1TSHRMEN1KMT2A
SCHEMBL547625 0.75 KMT2A (0.46) ALDH1A1TDP1TSHRMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 — — US disclosed
US-9459531-B2 — — 2016-10-04 — — US disclosed
US-9323150-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-26 — — US disclosed
US-9188865-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2015-11-17 — — US disclosed
US-9188862-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same FUJIFILM CORPORATION (JP) 2015-11-17 — — US disclosed
US-20150293446-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-15 — — US disclosed
US-20150284492-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-08 — — US disclosed
US-20150010857-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-01-08 — — US disclosed
US-8865389-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2014-10-21 — — US disclosed
US-20140295332-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2014-10-02 — — US disclosed
US-20070224539-A1 Resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-09-27 — — US disclosed
EP-1837704-A2 Resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2007-09-26 — — EP disclosed
US-20070218406-A1 Acid generator; exposure to actinic radiation FUJIFILM CORPORATION (JP) 2007-09-20 — — US disclosed
US-20070218407-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-09-20 — — US disclosed
EP-1835341-A1 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2007-09-19 — — EP disclosed
US-7217493-B2 acid-decomposable group-containing polysiloxane or polysilsesquioxane and a specific amount of an acid generator that generates a sulfonic acid, and an organic base; high sensitivity, high resolution and good line edge roughness FUJIFILM CORPORATION (JP) 2007-05-15 — — US disclosed
EP-1770441-A2 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2007-04-04 — — EP disclosed
US-20070072121-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 — — US disclosed
US-20070042291-A1 Positive resist composition and a pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-02-22 — — US disclosed
EP-1755000-A2 Positive resist composition and a pattern forming method using the same Fuji Photo Film Co., Ltd. (JP) 2007-02-21 — — EP disclosed
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