Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.35 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
| ▸ | CA12 | O43570 | 2/20 | 0.32 |
| ▸ | CA1 | P00915 | 2/20 | 0.32 |
| ▸ | CA2 | P00918 | 2/20 | 0.32 |
| ▸ | CA9 | Q16790 | 2/20 | 0.32 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.32 |
| ▸ | MGAM | O43451 | 1/20 | 0.32 |
| ▸ | GAA | P10253 | 1/20 | 0.32 |
| ▸ | SI | P14410 | 1/20 | 0.32 |
| ▸ | MGAM2 | Q2M2H8 | 1/20 | 0.32 |
| ▸ | SOAT1 | P35610 | 1/20 | 0.32 |
| ▸ | HCAR2 | Q8TDS4 | 1/20 | 0.31 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.30 |
| ▸ | GLO1 | Q04760 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7543226 | 0.77 | ALDH1A1 (0.38) | ALDH1A1LMNAHSD17B10CA12CA1 | |
| SCHEMBL27988151 | 0.72 | ALDH1A1 (0.35) | ALDH1A1LMNAHSD17B10CA12CA1 | |
| SCHEMBL675561 | 0.71 | — | — | |
| SCHEMBL675832 | 0.71 | — | — | |
| SCHEMBL622054 | 0.69 | — | — | |
| SCHEMBL8759901 | 0.69 | ALDH1A1 (0.32) | ALDH1A1LMNAHSD17B10 | |
| SCHEMBL21049749 | 0.67 | EP300 (0.43) | LMNAHSD17B10ALOX15NPSR1 | |
| SCHEMBL12971207 | 0.67 | SOAT1 (0.38) | ALDH1A1LMNAHSD17B10CA12CA1 | |
| SCHEMBL4942105 | 0.67 | SOAT1 (0.38) | ALDH1A1LMNAHSD17B10CA12CA1 | |
| SCHEMBL32669037 | 0.65 | CYP2D6 (0.37) | ALDH1A1LMNAHSD17B10ALOX15MGAM |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11955341-B2 | Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device | VERSUM MATERIALS US, LLC (US) | 2024-04-09 | — | — | US | claimed |
| CN-113557287-B | Etching solution and method for selectively removing silicon nitride in semiconductor device manufacturing process | 弗萨姆材料美国有限责任公司 | 2023-03-24 | — | — | CN | claimed |
| US-20220157613-A1 | Etching Solution And Method For Selectively Removing Silicon Nitride During Manufacture Of A Semiconductor Device | VERSUM MATERIALS US, LLC (US) | 2022-05-19 | — | — | US | claimed |
| EP-3938465-A1 | ETCHING SOLUTION AND METHOD FOR SELECTIVELY REMOVING SILICON NITRIDE DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE | Versum Materials US, LLC (US) | 2022-01-19 | — | — | EP | claimed |
| CN-113557287-A | Etching solution and method for selectively removing silicon nitride in semiconductor device manufacturing process | 弗萨姆材料美国有限责任公司 | 2021-10-26 | — | — | CN | claimed |
| WO-2020185762-A1 | ETCHING SOLUTION AND METHOD FOR SELECTIVELY REMOVING SILICON NITRIDE DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE | VERSUM MATERIALS US, LLC (US) | 2020-09-17 | — | — | WO | claimed |
| EP-2993687-B1 | METHOD FOR PROVIDING PORE SEALING LAYER ON POROUS LOW DIELECTRIC CONSTANT FILMS | VERSUM MAT US LLC (US) | 2020-02-05 | — | — | EP | claimed |
| EP-2993687-A1 | METHOD AND COMPOSITION FOR PROVIDING PORE SEALING LAYER ON POROUS LOW DIELECTRIC CONSTANT FILMS | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-03-09 | — | — | EP | claimed |
| US-20160049293-A1 | METHOD AND COMPOSITION FOR PROVIDING PORE SEALING LAYER ON POROUS LOW DIELECTRIC CONSTANT FILMS | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-02-18 | — | — | US | claimed |
| WO-2007047822-A2 | NANOPOROUS LOW-K FILMS WITH INFILTRATED POROSITY | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2007-04-26 | — | — | WO | claimed |
| EP-3938465-B1 | ETCHING SOLUTION AND METHOD FOR SELECTIVELY REMOVING SILICON NITRIDE DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE | VERSUM MAT US LLC (US) | 2025-07-09 | — | — | EP | disclosed |
| US-12241010-B2 | Perovskite color converter and method of manufacturing the same | SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION (KR) | 2025-03-04 | — | — | US | disclosed |
| US-11955341-B2 | Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device | VERSUM MATERIALS US, LLC (US) | 2024-04-09 | — | — | US | disclosed |
| CN-113557287-B | Etching solution and method for selectively removing silicon nitride in semiconductor device manufacturing process | 弗萨姆材料美国有限责任公司 | 2023-03-24 | — | — | CN | disclosed |
| US-20220157613-A1 | Etching Solution And Method For Selectively Removing Silicon Nitride During Manufacture Of A Semiconductor Device | VERSUM MATERIALS US, LLC (US) | 2022-05-19 | — | — | US | disclosed |
| WO-2007047822-A2 | NANOPOROUS LOW-K FILMS WITH INFILTRATED POROSITY | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2007-04-26 | — | — | WO | disclosed |
| EP-1746132-A1 | SILICON-CONTAINING CURABLE COMPOSITION AND CURED OBJECT OBTAINED BY THERMALLY CURING THE SAME | Adeka Corporation (JP) | 2007-01-24 | — | — | EP | disclosed |
| EP-0091651-B1 | METHOD FOR FORMING MICROPATTERN | NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) | 1988-08-03 | — | — | EP | disclosed |
| US-4426247-A | Method for forming micropattern | NIPPON TELEGRAPH & TELEPHONE PUBLIC CORPORATION (JP) | 1984-01-17 | — | — | US | disclosed |
| EP-0091651-A2 | Method for forming micropattern | NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) | 1983-10-19 | — | — | EP | disclosed |