SCHEMBL677050

SCHEMBL677050

C[CH]c1ccccc1OC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.38

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 4/20 0.38
KMT2A Q03164 4/20 0.38
CNR2 P34972 5/20 0.35
FAAH O00519 2/20 0.35
KDM4E B2RXH2 1/20 0.34
EPHX2 P34913 1/20 0.34
SIGMAR1 Q99720 2/20 0.33
P2RX7 Q99572 1/20 0.33
TRPV6 Q9H1D0 1/20 0.31
CNR1 P21554 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27890922 0.83 ALDH1A1 (0.46) MEN1KMT2ACNR2FAAHKDM4E
SCHEMBL1397160 0.83 CNR2 (0.35) MEN1KMT2ACNR2FAAHKDM4E
SCHEMBL3793920 0.74 ALDH1A1 (0.41) MEN1KMT2ACNR2FAAHKDM4E
SCHEMBL30986891 0.71 MEN1 (0.41) MEN1KMT2AKDM4E
SCHEMBL677285 0.71 KMT2A (0.35) MEN1KMT2ACNR2FAAHEPHX2
SCHEMBL677548 0.70 HSD11B1 (0.36) MEN1KMT2ACNR2KDM4EP2RX7
SCHEMBL16792860 0.70 GRM5 (0.41) KDM4EP2RX7SMN1; SMN2
SCHEMBL16793242 0.70 TRPV6 (0.40) MEN1KMT2ACNR2FAAHKDM4E
SCHEMBL677051 0.70 TRPV6 (0.40) MEN1KMT2ACNR2FAAHKDM4E
SCHEMBL676967 0.69 CHRNA7 (0.35) MEN1KMT2ACNR2EPHX2SIGMAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
EP-1367439-B1 Radiation-sensitive composition FUJIFILM CORP (JP) 2012-08-01 EP disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
EP-2399168-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM Corporation (JP) 2011-12-28 EP disclosed
WO-2010150917-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2010-12-29 WO disclosed
EP-1467251-B1 Positive resist composition FUJIFILM CORP (JP) 2010-09-08 EP disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 US disclosed
US-7250246-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-07-31 US disclosed
US-7232640-B1 Positive resist composition FUJIFILM CORPORATION (JP) 2007-06-19 US disclosed
US-6743565-B2 POLYSTYRENE OXY DERIVATIVES THAT DECOMPOSE UNDER AN ACID TO INCREASE THE SOLUBILITY IN AN ALKALI DEVELOPER AND AN ACID GENERATOR FUJI PHOTO FILM CO., LTD. (JP) 2004-06-01 US disclosed
US-6727033-B2 A POSITIVE RESIST COMPOSITION COMPRISING A RESIN (A), WHICH IS DECOMPOSED BY THE ACTION OF AN ACID TO INCREASE SOLUBILITY IN AN ALKALI DEVELOPING SOLUTION, CONTAINING A STRUCTURAL UNIT INCLUDING A GROUP REPRESENTED BY FORMULA (X) DEFINED IN FUJI PHOTO FILM CO., LTD. (JP) 2004-04-27 US disclosed
US-20040033437-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. 2004-02-19 US disclosed
US-6692883-B2 GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER FUJI PHOTO FILM CO., LTD. (JP) 2004-02-17 US disclosed
EP-1367439-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2003-12-03 EP disclosed
US-6630280-B1 Resin and compound that generates an arylsulfonic acid when exposed to actinic radiation; sensitivity; resolution; smoothness FUJI PHOTO FILM CO., LTD. (JP) 2003-10-07 US disclosed
US-20030134221-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-07-17 US disclosed
US-20030108811-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-06-12 US disclosed
US-20020012866-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-01-31 US disclosed
US-6207343-B1 RESIN CONTAINING GROUPS WHICH DECOMPOSE BY THE ACTION OF AN ACID TO ENHANCE ITS SOLUBILITY IN AN ALKALINE DEVELOPING SOLUTION AND A COMPOUND WHICH GENERATES AN ACID UPON IRRADIATION WITH ACTINIC RAYS OR RADIATION FUJI PHOTO FILM CO., LTD. (JP) 2001-03-27 US disclosed